Electrical Transport — Oriented growth of semiconducting TCNQ@Cu3(BTC)2MOF on Cu(OH)2: crystallographic orientation and pattern formation toward semiconducting thin-film devices

4 measurement groups · 13 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Bending test current measurement

Oriented TCNQ@Cu3(BTC)2 film measured parallel to {111} · Thin Film

Flexible polyimide-supported TCNQ@Cu3(BTC)2 film held on a 3D printed base; current measured at 10 V as radius of curvature varied from flat to 8.25 mm.

Geometry: polyimide flexible substrate; bending perpendicular to nanobelt a-axis and c-axis compared
Context: guest-loaded conductive MOF target under bending
Measurement source: 3 · Characterization · Figure 5; Figure S10c

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Bending-test current at 20 mm radius	about 28-29 nA at 10 V	2.85e-8 A	—	Figure Axis Approximate	19617 · 2.3 Anisotropic conductivity · Figure 5
Bending-test current at 40 mm radius	about 28 nA at 10 V	2.8e-8 A	—	Figure Axis Approximate	19617 · 2.3 Anisotropic conductivity · Figure 5
Bending-test current at 8.25 mm radius	about 16-21 nA at 10 V depending on bend direction	1.85e-8 A	visual range about 16-21 nA	Figure Axis Range	19617 · 2.3 Anisotropic conductivity · Figure 5
Bending-test current at flat state	about 24 nA at 10 V	2.4e-8 A	—	Figure Axis Approximate	19617 · 2.3 Anisotropic conductivity · Figure 5
Minimum bending radius tested	8.25 mm	0.00825 m	—	Text Exact Reported	19617 · 2.3 Anisotropic conductivity · Figure 5
Conductivity stability under bending	conductivity did not change significantly from flat state	—	—	Text Qualitative	19617 · 2.3 Anisotropic conductivity · Figure 5

Two-probe I-V measurement

Electrical conductivity

Cu(OH)2 nanobelt film electrical control · Thin Film

Cu(OH)2 nanobelt film on polyimide measured with Pt pads 100 um apart; voltage swept -10 to 10 V.

Geometry: polyimide substrate with Pt electrodes
Context: inorganic support/control
Measurement source: 11 · Figure S10 caption · Figure S10a,b

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu(OH)2 control conductivity relative to TCNQ@Cu3(BTC)2	1000 times lower conductivity than the TCNQ@Cu3(BTC)2 thin film	—	—	Text Approximate	19617 · 2.3 Anisotropic conductivity · Figure S10
Cu(OH)2 control current at +10 V	about +1.3 x 10^-4 uA at +10 V	1.3e-10 A	—	Figure Axis Approximate	11 · Figure S10 caption · Figure S10b

Two-probe I-V measurement

Electrical conductivity

Oriented TCNQ@Cu3(BTC)2 film measured parallel to {111} · Thin Film

Pt electrodes contacted with microprobes; voltage swept from -10 to 10 V using Keithley 4200A-SCS; Pt pads 100 um apart for plotted I-V; conductivity calculated with assumed 300 nm thickness.

Geometry: polyimide substrate; Pt pads; electrical measurement direction parallel to {111} lattice planes
Context: guest-loaded conductive MOF target
Measurement source: 3 · Characterization · Figure 4; Figure S10

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Parallel/perpendicular conductivity ratio	approximately 10 times higher in the direction parallel to {111}	—	—	Text Approximate	19617 · 2.3 Anisotropic conductivity · Figure 4
I-V current at +10 V for {111}-parallel orientation	about +0.30 uA at +10 V	3e-7 A	—	Figure Axis Approximate	19616 · 2.3 Anisotropic conductivity · Figure 4
Electrical conductivity parallel to {111}Marked as a best value within this paper	~3.2 x 10^-3 S m^-1	0.000032 S cm^-1	—	Text Approximate	19617 · 2.3 Anisotropic conductivity · Figure 4

Two-probe I-V measurement

Electrical conductivity

Oriented TCNQ@Cu3(BTC)2 film measured vertical to {111} · Thin Film

Pt electrodes contacted with microprobes; voltage swept from -10 to 10 V using Keithley 4200A-SCS; Pt pads 100 um apart for plotted I-V; conductivity calculated with assumed 300 nm thickness.

Geometry: polyimide substrate; Pt pads; electrical measurement direction vertical/perpendicular to {111} lattice planes
Context: guest-loaded conductive MOF target
Measurement source: 19616 · 2.3 Anisotropic conductivity · Figure 4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
I-V current at +10 V for {111}-vertical orientation	about +0.04 uA at +10 V	4e-8 A	—	Figure Axis Approximate	19616 · 2.3 Anisotropic conductivity · Figure 4
Electrical conductivity perpendicular/vertical to {111}	~3.9 x 10^-4 S m^-1	0.0000039 S cm^-1	—	Text Approximate	19617 · 2.3 Anisotropic conductivity · Figure 4