Electrical Transport — Fabrication of a halopyridine appended Co(II) based 1D coordination polymer for efficient charge transportation

3 measurement groups · 18 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Impedance-derived total conductivity versus frequency

Electrical conductivity

Al/compound 1/ITO thin-film MS junction · Thin Film

Total conductivity calculated from impedance and fit/discussed using Jonscher's law at room temperature.

Temperature: room temperature
Geometry: Al/compound 1/ITO thin-film junction
Context: pristine compound 1 film
Measurement source: p004-p005 · 3.3 Dielectric properties · Fig. 4c

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
dc conductivity from extrapolated total-conductivity curve	1.23 x 10^-6 S/m	—	—	Text Exact Reported	p005 · 3.3 Dielectric properties · Fig. 4c
Jonscher exponent n	0.64	—	—	Text Exact Reported	p005 · 3.3 Dielectric properties · Fig. 4c inset
total conductivity at high plotted frequency	approximately 1.2 x 10^-5 S/m near high-frequency end of Fig. 4c	—	visual estimate from axis	Figure Axis Approximate	p004 · 3.3 Dielectric properties · Fig. 4c

Dielectric spectroscopy

Impedance spectroscopy

Al/compound 1/ITO thin-film MS junction · Thin Film

Dielectric behaviour measured from 40 Hz to 10 MHz at room temperature; dielectric constant and loss plotted versus log frequency.

Temperature: room temperature
Geometry: Al/compound 1/ITO thin-film junction
Context: pristine compound 1 film
Measurement source: p002 · 2.5 Dielectric study · Fig. 4a-b

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
dielectric constant at high plotted frequency	approximately 0.1 near high-frequency end of Fig. 4a	—	visual estimate from axis	Figure Axis Approximate	p004 · 3.3 Dielectric properties · Fig. 4a
dielectric constant at low plotted frequency	approximately 2.2 near low-frequency end of Fig. 4a	—	visual estimate from axis	Figure Axis Approximate	p004 · 3.3 Dielectric properties · Fig. 4a
dielectric spectroscopy frequency range	40 Hz to 10 MHz	—	—	Text Range	p002 · 2.5 Dielectric study
dielectric loss at low plotted frequency	approximately 1.1 x 10^5 at low-frequency end of Fig. 4b	—	visual estimate from axis	Figure Axis Approximate	p004 · 3.3 Dielectric properties · Fig. 4b

Current-voltage measurement and Schottky diode parameter extraction

Electrical conductivity

Al/compound 1/ITO thin-film MS junction · Thin Film

Bias voltage +/-1 V applied to Al/compound/ITO metal-semiconductor junction; room-temperature diode parameters extracted from I-V and ln I-V plots.

Temperature: room temperature
Geometry: Al/compound 1/ITO thin-film MS junction; effective diode area 7.065 x 10^-6 m2
Context: pristine compound 1 film
Measurement source: p002 · 2.6 Electrical measurements · Fig. 5; Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Schottky barrier heightMarked as a best value within this paper	0.72 eV	—	—	Table Exact Reported	p005 · 3.4 Electrical analysis · Table 1
effective diode area	7.065 x 10^-6 m2	—	—	Text Exact Reported	p002 · 2.6 Electrical measurements
film thickness	~1 um	0.000001 m	—	Visual Estimate Approximate	p002 · 2.6 Electrical measurements
forward current at +1 V	approximately 2.1 x 10^-4 A at +1 V	—	visual estimate from axis	Figure Axis Approximate	p005 · 3.4 Electrical analysis · Fig. 5a
ideality factorMarked as a best value within this paper	2.81	—	—	Table Exact Reported	p005 · 3.4 Electrical analysis · Table 1
I-V bias range	+/-1 V	—	—	Text Range	p002 · 2.6 Electrical measurements
rectification ratioMarked as a best value within this paper	22	—	—	Table Exact Reported	p005 · 3.4 Electrical analysis · Table 1
reverse current at -1 V	approximately -1.0 x 10^-5 A at -1 V	—	visual estimate from axis	Figure Axis Approximate	p005 · 3.4 Electrical analysis · Fig. 5a
reverse saturation currentMarked as a best value within this paper	0.63 x 10^-6 A	—	—	Table Exact Reported	p005 · 3.4 Electrical analysis · Table 1
room-temperature conductivity from Schottky diode tableMarked as a best value within this paper	4.84 x 10^-6 S/m	—	—	Table Exact Reported	p005 · 3.4 Electrical analysis · Table 1
turn-on voltage	low; numeric value not reported	—	—	Qualitative Qualitative	p005 · 3.4 Electrical analysis · Fig. 5b