Das K.S., Pal B., Saha S. et al. · Dalton Transactions · 2020 · 17005-17016
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
The authors use TGA to argue that both MOF networks have sufficient thermal stability for electrical-device fabrication.
Caveat: TGA values are not a direct operational stability test of the diode devices.
17010-17011 · TGA studies · Fig. 5 · Linked to 4 structured results
PXRD patterns are used to confirm phase purity of both compounds and active layers before Schottky diode fabrication.
Caveat: The SI provides graphical PXRD comparisons but no numerical phase-fraction analysis.
17006 · Fabrication · ESI Fig. 4 and 5 · Linked to 2 structured results
Compound 2 is claimed to perform better than compound 1 because it has higher conductivity, lower series resistance and lower barrier height.
Caveat: Device results are measured on spin-coated Schottky structures rather than free-standing single crystals.
17012-17013 · J-V and impedance analysis · Table 1; Table 2 · Linked to 4 structured results
Changing the counter anion from BF4 to SO4 changes the framework: compound 1 has BF4-filled nanotubular pores, whereas compound 2 forms a self-interpenetrated framework with sulfate-water clusters.
17008-17009 · Structural description · Fig. 2; Fig. 3 · Linked to 4 structured results
The paper claims that anions or anion-water clusters inside cationic, otherwise insulating Zn-MOF frameworks mediate charge transportation.
Caveat: The authors acknowledge possible minor ionic contribution to current and anneal/measure under vacuum and glove-box conditions to minimise solvent/ionic artefacts.
17011 · Analysis of J-V characteristics · Fig. 6 · Linked to 4 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| {[Zn(H2MBP)1.5](BF4)}n (compound 1) | C21H24B2F8N12Zn; framework formula {[Zn(H2MBP)1.5](BF4)}nZn(II) atoms; octahedral ZnN6 coordination to six H2MBP molecules · 4,4'-methylene-bispyrazole (H2MBP), cis and trans conformers | 3D · PristineMonoclinic C 2/c cationic 3D framework with nanotubular pores occupied by BF4 counter anions; CCDC 2018311. | 17007-17008 · Structural description · Fig. 2 |
| {[Zn3(H2MBP)4(H2O)4(SO4)3](H2O)7}n (compound 2) | C56H104N32O44S6Zn6 in SI/CIF; framework formula {[Zn3(H2MBP)4(H2O)4(SO4)3](H2O)7}nZn(II) atoms with octahedral and trigonal bipyramidal geometries; sulfate-bound Zn nodes · 4,4'-methylene-bispyrazole (H2MBP), trans conformers | 3D · PristineMonoclinic P 21/c self-interpenetrated 3D framework with hollow tubular pores and extensive sulfate-water clusters; CCDC 2018312. | 17009 · Structural description · Fig. 3 |
| 4,4'-methylene-bispyrazole (H2MBP) | C7H8N4H2MBP ligand used to construct compounds 1 and 2 | 0D · UnknownNeutral flexible bispyrazole ligand; monoclinic P 21/n crystal structure reported in SI and CIF. | p002 · Synthesis and Characterization of H2MBP · Fig. SI 1; Table SI-1 |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| compound 1 crystalsresearch_0405__mat__mat_compound1 | Single Crystal · Target Sample · Guest Loaded | tiny block-shaped white crystals, washed with water-methanol (1:1) and dried in air | 17006 · Synthesis of {[Zn(H2MBP)1.5](BF4)}n (1) |
| ITO/compound 1/Al Schottky dioderesearch_0405__mat__mat_compound1 | Thin Film · Target Sample · Guest Loaded | compound 1 DMF solution ultrasonicated, spin-coated on ITO at 1000 rpm, dried in hot air oven, Al deposited under 10^-6 TorrITO-coated glass with evaporated Al top contact · Al metal thickness around 1 um; active MOF-film thickness not reported | 17006 · Fabrication of ITO/synthesized zinc-based MOF/Al-based Schottky barrier diodes · Fig. 1 |
| compound 2 crystalsresearch_0405__mat__mat_compound2 | Single Crystal · Target Sample · Guest Loaded | white block-shaped crystals obtained by route similar to compound 1 with ZnSO4.7H2O and mild heating | 17006 · Synthesis of {[Zn3(H2MBP)4(H2O)4(SO4)3](H2O)7}n (2) |
| ITO/compound 2/Al Schottky dioderesearch_0405__mat__mat_compound2 | Thin Film · Target Sample · Guest Loaded | compound 2 DMF solution ultrasonicated, spin-coated on ITO at 1000 rpm, dried in hot air oven, Al deposited under 10^-6 TorrITO-coated glass with evaporated Al top contact · Al metal thickness around 1 um; active MOF-film thickness not reported | 17006 · Fabrication of ITO/synthesized zinc-based MOF/Al-based Schottky barrier diodes · Fig. 1 |
| H2MBP recrystallised productresearch_0405__mat__mat_h2mbp | Single Crystal · Paper Level Unspecified · Unknown | recrystallised from absolute ethanol after hot-water dissolution, neutralisation, filtration, washing and drying | p002 · Synthesis and Characterization of H2MBP · Fig. SI 1 |