Measurement evidence
Utilization of counter anions for charge transportation in the electrical device fabrication of Zn(ii) metal-organic frameworks · Das K.S., Pal B., Saha S. et al. · Dalton Transactions · 2020 · 17005-17016
Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.
ITO/compound 1/Al Schottky diode · Thin Film
Conductivity vs frequency split into dc plateau and ac dispersive regions.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| dc conductivity from frequency-dependent total conductivity | 2.24 x 10^-6 S m^-1 | 0.00000224 S m^-1 | — | Text Exact Reported | 17013 · Impedance spectroscopy (IS) analysis · Fig. 9 |
ITO/compound 2/Al Schottky diode · Thin Film
Conductivity vs frequency split into dc plateau and ac dispersive regions.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| dc conductivity from frequency-dependent total conductivityMarked as a best value within this paper | 3.16 x 10^-6 S m^-1 | 0.00000316 S m^-1 | — | Text Exact Reported | 17013 · Impedance spectroscopy (IS) analysis · Fig. 9 |
ITO/compound 1/Al Schottky diode · Thin Film
40 Hz to 5 MHz, 100 mV oscillatory voltage, room temperature, dark conditions; Nyquist Z' vs Z''.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| bulk resistance from Nyquist semicircle | approximately 7.7 x 10^4 Ohm | 77000 Ohm | approximately | Text Approximate | 17012 · Impedance spectroscopy (IS) analysis · Fig. 7 |
| equivalent-circuit Cequiv | 1.1609 x 10^-10 F | 1.1609e-10 F | — | Table Exact Reported | 17013 · Table 2 · Table 2 |
| equivalent-circuit inductance L | 1.8188 x 10^-9 H | 1.8188e-9 H | — | Table Exact Reported | 17013 · Table 2 · Table 2 |
| equivalent-circuit Requiv | 75 890 Ohm | 75890 Ohm | — | Table Exact Reported | 17013 · Table 2 · Table 2 |
| equivalent-circuit series resistance Rs | 310.05 Ohm | 310.05 Ohm | — | Table Exact Reported | 17013 · Table 2 · Table 2 |
ITO/compound 2/Al Schottky diode · Thin Film
40 Hz to 5 MHz, 100 mV oscillatory voltage, room temperature, dark conditions; Nyquist Z' vs Z''.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| bulk resistance from Nyquist semicircleMarked as a best value within this paper | approximately 6.3 x 10^4 Ohm | 63000 Ohm | approximately | Text Approximate | 17012 · Impedance spectroscopy (IS) analysis · Fig. 7 |
| equivalent-circuit Cequiv | 9.7899 x 10^-12 F | 9.7899e-12 F | — | Table Exact Reported | 17013 · Table 2 · Table 2 |
| equivalent-circuit inductance L | 7.0347 x 10^-6 H | 0.0000070347 H | — | Table Exact Reported | 17013 · Table 2 · Table 2 |
| equivalent-circuit RequivMarked as a best value within this paper | 63 064.2 Ohm | 63064.2 Ohm | — | Table Exact Reported | 17013 · Table 2 · Table 2 |
| equivalent-circuit series resistance RsMarked as a best value within this paper | 153.66 Ohm | 153.66 Ohm | — | Table Exact Reported | 17013 · Table 2 · Table 2 |
ITO/compound 1/Al Schottky diode · Thin Film
-1 to +1 V bias; vacuum 10^-3 Torr; inside glove box; device annealed at 70 C in vacuum oven for several minutes to remove solvent.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| ideality factor eta | 5.26 | — | — | Table Exact Reported | 17012 · Table 1 · Table 1 |
| barrier height from F(V) vs V | 0.63 eV | — | — | Table Exact Reported | 17012 · Table 1 · Table 1 |
| barrier height from H vs J | 0.61 eV | — | — | Table Exact Reported | 17012 · Table 1 · Table 1 |
| rectification ratio | 14.76 | — | — | Table Exact Reported | 17012 · Table 1 · Table 1 |
| series resistance from dV/dlnJ vs J | 0.71 KOhm | 710 Ohm | — | Table Exact Reported | 17012 · Table 1 · Table 1 |
| series resistance from F(V) vs V | 0.25 KOhm | 250 Ohm | — | Table Exact Reported | 17012 · Table 1 · Table 1 |
| series resistance from H vs J | 1.08 KOhm | 1080 Ohm | — | Table Exact Reported | 17012 · Table 1 · Table 1 |
| ohmic-region conductivityMarked as a best value within this paper | 8.71 x 10^-5 S m^-1 | 0.0000871 S m^-1 | — | Table Exact Reported | 17012 · Table 1 · Table 1 |
ITO/compound 2/Al Schottky diode · Thin Film
-1 to +1 V bias; vacuum 10^-3 Torr; inside glove box; device annealed at 70 C in vacuum oven for several minutes to remove solvent.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| ideality factor etaMarked as a best value within this paper | 2.99 | — | — | Table Exact Reported | 17012 · Table 1 · Table 1 |
| barrier height from F(V) vs VMarked as a best value within this paper | 0.58 eV | — | — | Table Exact Reported | 17012 · Table 1 · Table 1 |
| barrier height from H vs JMarked as a best value within this paper | 0.59 eV | — | — | Table Exact Reported | 17012 · Table 1 · Table 1 |
| rectification ratioMarked as a best value within this paper | 18.94 | — | — | Table Exact Reported | 17012 · Table 1 · Table 1 |
| series resistance from dV/dlnJ vs JMarked as a best value within this paper | 0.12 KOhm | 120 Ohm | — | Table Exact Reported | 17012 · Table 1 · Table 1 |
| series resistance from F(V) vs VMarked as a best value within this paper | 0.13 KOhm | 130 Ohm | — | Table Exact Reported | 17012 · Table 1 · Table 1 |
| series resistance from H vs JMarked as a best value within this paper | 0.12 KOhm | 120 Ohm | — | Table Exact Reported | 17012 · Table 1 · Table 1 |
| ohmic-region conductivityMarked as a best value within this paper | 5.79 x 10^-4 S m^-1 | 0.000579 S m^-1 | — | Table Exact Reported | 17012 · Table 1 · Table 1 |