Sensing Application — Two-Dimensional Conjugated Metal-Organic Frameworks with Large Pore Apertures and High Surface Areas for NO2 Selective Chemiresistive Sensing

3 measurement groups · 17 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Ni3(HIB)2 chemiresistive sensing device · Electrode

Room-temperature response of Ni3(HIB)2 and Ni3(HITP)2 toward 100 ppm NO2.

Temperature: 298
Atmosphere: NO2 in air
Geometry: not separately specified
Context: pristine smaller-pore 2D c-MOF controls
Measurement source: S18-S20 · Chemiresistive Sensing · Figures S33-S34 / Table S3

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Ni3(HIB)2 response to 100 ppm NO2	138%	—	—	SI Table Exact Reported	S20 · Table S3 · Table S3
Ni3(HIB)2 response time to 100 ppm NO2	2.44 min	—	—	SI Table Exact Reported	S20 · Table S3 · Table S3
Ni3(HITP)2 response to 100 ppm NO2	71%	—	—	SI Table Exact Reported	S20 · Table S3 · Table S3
Ni3(HITP)2 response time to 100 ppm NO2	2.25 min	—	—	SI Table Exact Reported	S20 · Table S3 · Table S3

HIOTP-Cu chemiresistive sensing device · Electrode

Room temperature gas sensing on HIOTP-Cu device, including 100 ppm NO2 response.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
HIOTP-Cu response to 100 ppm NO2Marked as a best value within this paper	55.6%	—	—	Figure Axis Approximate	S17 · Chemiresistive Sensing · Figure S30
HIOTP-Cu recovery time after 100 ppm NO2Marked as a best value within this paper	trec = 1.24 min	—	—	Figure Axis Approximate	S17 · Chemiresistive Sensing · Figure S31
HIOTP-Cu response time to 100 ppm NO2Marked as a best value within this paper	tres = 0.51 min	—	—	Figure Axis Approximate	S17 · Chemiresistive Sensing · Figure S31

HIOTP-Ni chemiresistive sensing device · Electrode

Room temperature, dark, dry synthetic air purge, 5 V bias, 600 sccm gas flow; response defined as Ig/I0 - 1.

Temperature: 298
Atmosphere: dry synthetic air with NO2 or VOC analytes
Geometry: interdigital electrode, 100 um gaps
Context: pristine HIOTP-Ni active layer
Measurement source: S3 / S20 · Gas sensor characterization; Chemiresistive Sensing · Figure 3 / Table S3

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
HIOTP-Ni crystal structure after NO2 sensing	PXRD preserved after sensing	—	—	Text Qualitative	p004 · Long-term stability · Figures S35-S36
HIOTP-Ni theoretical NO2 limit of detectionMarked as a best value within this paper	0.21 ppm (Table S3 rounds to 0.2 ppm)	—	—	Text Exact Reported	p004 · NO2 sensing · Figure 3d / Tables S3-S4
HIOTP-Ni log-log response-concentration linearity	R2 = 0.98 over 1-100 ppm	—	—	Text Exact Reported	p003-p004 · NO2 sensing · Figure 3d
HIOTP-Ni 10 ppm NO2 repeatability coefficient of variation	1.3%	—	—	Text Exact Reported	p003 · NO2 sensing · Figure 3c
HIOTP-Ni response to 100 ppm NO2Marked as a best value within this paper	2416%	—	—	SI Table Exact Reported	S20 · Table S3 · Table S3 / Figure 3a
HIOTP-Ni response to 10 ppm NO2Marked as a best value within this paper	405%	—	—	SI Table Exact Reported	S20 · Chemiresistive Sensing · Table S3
HIOTP-Ni recovery time after 100 ppm NO2	55.42 min	—	—	SI Table Exact Reported	S20 · Table S3 · Table S3
HIOTP-Ni recovery time after 10 ppm NO2	10.32 min	—	—	SI Table Exact Reported	S20 · Table S3 · Table S3
HIOTP-Ni response time to 100 ppm NO2	1.88 min	—	—	SI Table Exact Reported	S20 · Table S3 · Table S3
HIOTP-Ni response time to 10 ppm NO2Marked as a best value within this paper	1.69 min	—	—	SI Table Exact Reported	S20 · Table S3 · Table S3