Primary studyCore evidenceThin Film Device

Surface Morphology and Electrical Properties of Cu3BTC2 Thin Films before and after Reaction with TCNQ

Thurmer K., Schneider C., Stavila V. et al. · ACS Applied Materials and Interfaces · 2018 · 39400-39410

5materials
17samples
7synthesis routes
12measurements
44results
9claims and caveats

Evidence map

Open a family to keep every result attached to its sample, method and conditions.

Author interpretations and caveats

Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.

Application RelevanceSupport assessment: Medium

Because Cu3BTC2 films can be grown on many substrates, their conversion offers a route to conductive Cu(TCNQ) on nonplanar or device substrates.

Caveat: Actual devices beyond simple Au-pad I-V structures were not demonstrated in this paper.

p009 / 39408 · Conclusions · Linked to 3 structured results

Application RelevanceSupport assessment: Medium

The TCNQ/MeOH conversion is not limited to Cu3BTC2; a PCN-14 film also shows Cu(TCNQ) phase I signatures after infiltration.

Caveat: Only SI GIXRD evidence is supplied; detailed PCN-14 synthesis and quantitative conversion are not reported.

p007 / 39406 · Chemical Processes · Figure S4 · Linked to 1 structured result

Phase AssignmentSupport assessment: High

Cu3BTC2 thin films react with methanolic TCNQ to form dense conductive Cu(TCNQ) films rather than merely guest-loaded TCNQ@Cu3BTC2.

Caveat: For thinner films, AES still shows small oxygen contributions; complete phase assignment is strongest for 20- and 50-cycle films.

p001 / 39400 · Abstract · Linked to 3 structured results

Structure Property LinkSupport assessment: High

Amorphous SiO2/Si(001) gives a narrower Cu3BTC2 crystallite-size distribution than polycrystalline ITO.

Caveat: Comparison is for 4-cycle films and based on AFM histogram analysis.

p008 / 39407 · Enhanced Growth · Figure 10 · Linked to 2 structured results

Synthesis MechanismSupport assessment: Medium

Bimodal Cu3BTC2 growth on polycrystalline ITO is attributed to compound crystals where merged crystallites enable accelerated layer growth.

Caveat: Growth model is a proposed mechanism based on AFM morphology and histogram analysis.

p008 / 39407 · Conclusions · Linked to 3 structured results

Synthesis MechanismSupport assessment: Medium

The conversion involves mass transport through solution and is not controlled by the initial Cu3BTC2 crystallite morphology.

Caveat: Mechanistic inference from morphology changes; no direct in situ transport measurement is reported.

p008 / 39407 · Conclusions · Linked to 3 structured results

Synthesis MechanismSupport assessment: Medium

Methanol is identified as the initiator/electron source for the TCNQ-induced conversion, with water or trace moisture also likely involved.

Caveat: The role of water is inferred by comparison with prior anhydrous/aprotic solvent reports, not isolated experimentally here.

p009 / 39408 · Conclusions · Linked to 3 structured results

Synthesis MechanismSupport assessment: Medium

Cu3BTC2 powder converts only partially because large grains develop a nonporous Cu(TCNQ) shell that slows diffusion to the core.

Caveat: Shell/front mechanism is inferred from incomplete PXRD conversion and particle-size comparison.

p006 / 39405 · Partial Conversion · Linked to 2 structured results

Transport MechanismSupport assessment: High

Chemical conversion from insulating Cu3BTC2 to Cu(TCNQ) increases conductivity by about ten orders of magnitude.

Caveat: Conductivity uses assumed 100 nm thickness; parent value is reported as an upper bound.

p006 / 39405 · Electrical Conductivity Change · Figure 8 · Linked to 3 structured results

Material identities

Names and aliases are kept exactly within the paper’s own identity model.

MaterialCompositionStructure contextSource
Cu3BTC2 (HKUST-1)Browse family: HKUST-1 / Cu₃(BTC)₂Cu3BTC2Cu paddlewheel units / open metal sites after desolvation · BTC = 1,3,5-benzenetricarboxylate3D · PristineParent porous MOF thin film; GIXRD before TCNQ treatment matches the Cu3BTC2 reference structure.p001 / 39400 · Abstract
Cu acetate precursor islandsCu(Ac)2-derived surface materialCu acetate precursor · acetate0D · UnknownHalf-cycle step-by-step precursor islands, not a MOF framework.p004 / 39403 · Results and Discussion · Figure 1
Cu(TCNQ)Cu(TCNQ)Cu coordinated to TCNQ; authors discuss reduction to Cu(I) · TCNQ = 7,7,8,8-tetracyanoquinodimethaneunknown · DerivedConductive coordination polymer formed by chemical conversion of Cu3BTC2 in methanolic TCNQ; GIXRD assigned to Cu(TCNQ) phase I.p005 / 39404 · Results and Discussion · Figure 6
PCN-14 filmPCN-14Cu paddlewheel MOF system · not specified in supplied SI caption3D · PristineSolvothermally synthesised Cu-paddlewheel MOF film used as a supporting example for TCNQ conversion.p003 / S-3 · Figure captions · Figure S4
TCNQ-treated PCN-14 film with Cu(TCNQ) signaturesPCN-14 + Cu(TCNQ) signaturesCu paddlewheel MOF transformed partly to Cu(TCNQ) · PCN-14 linker plus TCNQ-derived coordination polymer phaseunknown · CompositeAfter TCNQ/MeOH infiltration, GIXRD shows signatures of Cu(TCNQ) phase I.p007 / 39406 · Chemical Processes · Figure S4

Sample register

Sample form, processing state and composition status define the context for measurements.

Show 17 sample records
SampleForm and roleProcessing and geometrySource
20-cycle Cu3BTC2 film on ITOresearch_0418__mat__mat_cu3btc2Thin Film · Pristine Control · Pristine FrameworkStep-by-step ethanol deposition; desolvated before TCNQ treatment in converted samples.polycrystalline ITO · 20 cycles; 54 nm average film thicknessp002 / 39401 · Introduction
2-cycle Cu3BTC2 film on ITOresearch_0418__mat__mat_cu3btc2Thin Film · Pristine Control · Pristine FrameworkStep-by-step ethanol deposition; characterised before TCNQ treatment.polycrystalline ITO · 2 deposition cyclesp003 / 39402 · Figure caption · Figure 1b
4-cycle Cu3BTC2 film on polycrystalline ITOresearch_0418__mat__mat_cu3btc2Thin Film · Pristine Control · Pristine FrameworkStep-by-step grown for substrate-dependent size-distribution comparison.polycrystalline ITO · 4 deposition cyclesp009 / 39408 · Figure caption · Figure 10
7-cycle Cu3BTC2 film on ITOresearch_0418__mat__mat_cu3btc2Thin Film · Pristine Control · Pristine FrameworkStep-by-step ethanol deposition; characterised before TCNQ treatment.polycrystalline ITO · 7 deposition cyclesp003 / 39402 · Figure caption · Figure 1c
activated Cu3BTC2 powderresearch_0418__mat__mat_cu3btc2Powder · Pristine Control · Pristine FrameworkActivated powder subjected to TCNQ/MeOH infiltration for comparison with thin films.grain size 10-30 ump006 / 39405 · Partial Conversion · Figure 7
50-cycle Cu3BTC2 film on Au-patterned Si/SiO2 deviceresearch_0418__mat__mat_cu3btc2Electrode · Pristine Control · Pristine FrameworkStep-by-step grown on Au-patterned Si/SiO2 and measured before TCNQ conversion.Si wafer with 100 nm thermal SiO2 and Au electrodes · 50 cycles; average film thickness of 100 nm assumed for conductivityp006 / 39405 · Electrical Conductivity Change · Figure 8
4-cycle Cu3BTC2 film on amorphous SiO2/Si(001)research_0418__mat__mat_cu3btc2Thin Film · Pristine Control · Pristine FrameworkStep-by-step grown for substrate-dependent size-distribution comparison.amorphous SiO2/Si(001) · 4 deposition cyclesp009 / 39408 · Figure caption · Figure 10
0.5-cycle Cu acetate precursor on ITOresearch_0418__mat__mat_cu_acetate_precursorThin Film · Pristine Control · UnknownCu(Ac)2 half-cycle before linker exposure; used as nucleation/precursor control.polycrystalline ITO · 0.5 deposition cycle; only Cu(Ac)2 immersionp004 / 39403 · Results and Discussion · Figure 1a
TCNQ-treated 0.5-cycle precursor on ITOresearch_0418__mat__mat_cutcnqThin Film · Target Sample · UnknownDesolvated, immersed in saturated TCNQ/MeOH for 12 h, rinsed with methanol.polycrystalline ITO · 0.5 precursor cycle before conversionp004 / 39403 · Results and Discussion · Figures 4a and 5
Cu(TCNQ) film from 20-cycle Cu3BTC2 on ITOresearch_0418__mat__mat_cutcnqThin Film · Target Sample · UnknownDesolvated Cu3BTC2 film immersed in saturated TCNQ/MeOH for 12 h; fully converted at least near surface and by GIXRD.polycrystalline ITO · from 20-cycle, 54 nm average Cu3BTC2 filmp005 / 39404 · Results and Discussion · Figures 4c-6
Cu(TCNQ)-like film from 2-cycle Cu3BTC2 on ITOresearch_0418__mat__mat_cutcnqThin Film · Target Sample · UnknownCu3BTC2 film desolvated and immersed in saturated TCNQ/MeOH for 12 h.polycrystalline ITO · 2 precursor deposition cyclesp005 / 39404 · Figure caption · Figure 4b
Cu(TCNQ) film from 50-cycle Cu3BTC2 deviceresearch_0418__mat__mat_cutcnqElectrode · Target Sample · Unknown50-cycle Cu3BTC2 film infiltrated with TCNQ in MeOH and measured by I-V under ambient conditions.Si wafer with 100 nm thermal SiO2 and Au electrodes · 100 nm average film thickness assumed for conductivity calculationp006 / 39405 · Electrical Conductivity Change · Figure 8
Cu3BTC2 powder after 3 days TCNQ/MeOHresearch_0418__mat__mat_cutcnqPowder · Target Sample · CompositeActivated Cu3BTC2 powder immersed in saturated TCNQ/MeOH at room temperature for 3 days.10-30 um initial powder grainsp006 / 39405 · Partial Conversion · Figure 7
Cu3BTC2 powder after 7 days TCNQ/MeOHresearch_0418__mat__mat_cutcnqPowder · Target Sample · CompositeActivated Cu3BTC2 powder immersed in saturated TCNQ/MeOH at room temperature for 7 days.10-30 um initial powder grainsp006 / 39405 · Partial Conversion · Figure 7
polycrystalline ITO substrateresearch_0418__mat__mat_cu_acetate_precursorThin Film · Model System · ModelRinsed with ethanol, dried with dry N2, oxygen plasma treated for 10 min before deposition.ITOp002 / 39401 · Experimental Section
PCN-14 film after TCNQ/MeOH infiltrationresearch_0418__mat__mat_pcn14_tcnq_productThin Film · Target Sample · CompositePCN-14 film infiltrated with TCNQ in reagent-grade MeOH.not specifiedp003 / S-3 · Figure captions · Figure S4
solvothermally synthesised PCN-14 filmresearch_0418__mat__mat_pcn14Thin Film · Pristine Control · Pristine FrameworkSolvothermally synthesised film; detailed recipe not supplied.not specifiedp003 / S-3 · Figure captions · Figure S4