Rana O., Srivastava R., Chauhan G. et al. · Physica Status Solidi (A) Applications and Materials Science · 2012 · 2539-2545
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
F4-TCNQ interface layers improve hole injection, yielding near-unity injection efficiency for m-MTDATA with 1 nm F4-TCNQ and SCLC/ohmic behaviour for spiro-TAD and alpha-NPD at about 7 nm.
Caveat: Mobility values for SCLC comparison are taken from literature TOF measurements rather than measured independently here.
p006 / article p.2544 · Conclusions · Linked to 4 structured results
Using F4-TCNQ-modified ITO as OLED hole injection contacts increases current and luminescence and lowers operating voltage compared with unmodified anodes.
Caveat: OLED improvements are reported qualitatively and by plotted curves; no tabulated luminance, turn-on voltage or power-efficiency values are provided.
p006 / article p.2544 · Conclusions · Figure 4 · Linked to 1 structured result
The paper reports model metal/organic and ITO/organic interfaces, not a conductive MOF or coordination-framework material.
Caveat: The keyword list includes 'metal organic framework', but the experimental systems are F4-TCNQ molecular films, conducting substrates, hole transport materials and OLED stacks.
p001 / article p.2539 · Title and abstract
Increasing F4-TCNQ thickness increases ITO surface coverage; near-complete coverage at about 7 nm coincides with work-function saturation.
Caveat: Surface coverage is described qualitatively/approximately from AFM images; no quantitative image analysis is reported.
p004 / article p.2542 · Results and discussion · Figure 2 · Linked to 2 structured results
F4-TCNQ modification enhances substrate work function and is interpreted using an integer charge transfer model.
Caveat: Mechanistic interpretation is based on work-function trends and prior models, not direct spectroscopy in this paper.
p006 / article p.2544 · Conclusions · Linked to 3 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| F4-TCNQ-modified conducting substrates | F4-TCNQ thin films on Al, In, Ag, ITO or AuNone; metallic Al, In, Ag, Au films and ITO are electrode substrates, not framework nodes · None; F4-TCNQ is a molecular acceptor modifier, not a framework linker | unknown · Model SystemVacuum-deposited molecular F4-TCNQ layers on conducting substrates; no MOF/coordination-framework structure is reported. | p003 / article p.2541 · Experimental |
| F4-TCNQ-modified hole-only transport devices | ITO/F4-TCNQ/HTL/F4-TCNQ/Au, HTL = m-MTDATA, spiro-TAD or alpha-NPDNone · None | unknown · Model SystemLayered organic-electrode device stack used to test hole injection and SCLC behaviour; not a porous framework. | p003 / article p.2541 · Experimental |
| OLEDs with F4-TCNQ-modified ITO anodes | ITO/F4-TCNQ/HTL/Alq3/LiF/Al, HTL = m-MTDATA, spiro-TAD or alpha-NPDNone · None | unknown · Model SystemLayered OLED device stack for comparing unmodified and F4-TCNQ-modified anode interfaces. | p003 / article p.2541 · Experimental |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| Bare Al, In, Ag, ITO and Au conducting substratesresearch_0425__mat__mat_f4_tcnq_modified_electrodes | Electrode · Pristine Control · Model | Metal films vacuum deposited and briefly exposed to ambient; ITO cleaned sequentially and oxygen-plasma treated for 5 min.cleaned glass plates for vacuum-deposited Al, In, Ag and Au; commercial ITO-coated glass · metal films 120 nm; ITO about 120 nm | p003 / article p.2541 · Experimental |
| F4-TCNQ-coated Al, In, Ag, ITO and Au substrate seriesresearch_0425__mat__mat_f4_tcnq_modified_electrodes | Thin Film · Target Sample · Model | F4-TCNQ vacuum deposited at room temperature; KPM measured in ambient conditions.Al, In, Ag, ITO and Au conducting substrates · F4-TCNQ = 0, 1, 3, 5, 7 and 10 nm | p003 / article p.2541 · Experimental · Figure 1 |
| alpha-NPD hole-only devices with F4-TCNQ interfacesresearch_0425__mat__mat_hole_only_devices | Thin Film · Target Sample · Model | Organic layers deposited at about 10^-5 Torr; J-V measured in a cryostat under vacuum.ITO bottom electrode and Au top electrode · alpha-NPD 250 nm; F4-TCNQ x = 0, 1, 5 and 7 nm | p005 / article p.2543 · Results and discussion · Figure 3c |
| m-MTDATA hole-only devices with F4-TCNQ interfacesresearch_0425__mat__mat_hole_only_devices | Thin Film · Target Sample · Model | Organic layers deposited at about 10^-5 Torr; J-V measured in a cryostat under vacuum.ITO bottom electrode and Au top electrode · m-MTDATA 250 nm; F4-TCNQ interface layer x = 0 or 1 nm in Figure 3a | p005 / article p.2543 · Results and discussion · Figure 3a |
| spiro-TAD hole-only devices with F4-TCNQ interfacesresearch_0425__mat__mat_hole_only_devices | Thin Film · Target Sample · Model | Organic layers deposited at about 10^-5 Torr; J-V measured in a cryostat under vacuum.ITO bottom electrode and Au top electrode · spiro-TAD 250 nm; F4-TCNQ x = 0, 1, 3, 5 and 7 nm | p005 / article p.2543 · Results and discussion · Figure 3b |
| OLEDs with modified and unmodified ITO anodesresearch_0425__mat__mat_oled_devices | Thin Film · Target Sample · Model | OLEDs fabricated with and without substrate modification; J-V and L-V measured.ITO anode, with or without F4-TCNQ modification · HTL 30 nm; Alq3 50 nm; LiF 1 nm; Al reported as 100 nm in Experimental and 120 nm in Results text; F4-TCNQ x = 7 nm for alpha-NPD, 1 nm for m-MTDATA and 7 nm for spiro-TAD | p005-p006 / article pp.2543-2544 · Results and discussion · Figure 4 |