Electrochemistry Application — Modification of metal-organic interface using F4-TCNQ for enhanced hole injection properties in optoelectronic devices

Measurement evidence

Electrochemistry Application

Modification of metal-organic interface using F4-TCNQ for enhanced hole injection properties in optoelectronic devices · Rana O., Srivastava R., Chauhan G. et al. · Physica Status Solidi (A) Applications and Materials Science · 2012 · 2539-2545

1 measurement group · 4 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

OLED current density-voltage-luminescence intensity measurement

OLEDs with modified and unmodified ITO anodes · Thin Film

J-V-L measured using luminescence meter LMT 1009 interfaced with the source-measure unit and a computer; modified and unmodified anodes compared.

Geometry: ITO/(x nm)F4-TCNQ/HTL(30 nm)/Alq3(50 nm)/LiF(1 nm)/Al
Context: application-context OLED model devices, no MOF component
Measurement source: p006 / article p.2544 · Results and discussion · Figure 4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
F4-TCNQ anode-modifier thickness selected for alpha-NPD OLED	7 nm	—	—	Text Rounded Reported	p005-p006 / article pp.2543-2544 · Results and discussion · Figure 4
F4-TCNQ anode-modifier thickness selected for m-MTDATA OLED	1 nm	—	—	Text Rounded Reported	p005-p006 / article pp.2543-2544 · Results and discussion · Figure 4
F4-TCNQ anode-modifier thickness selected for spiro-TAD OLED	7 nm	—	—	Text Rounded Reported	p005-p006 / article pp.2543-2544 · Results and discussion · Figure 4
Effect of F4-TCNQ anode modification on OLED outputMarked as a best value within this paper	higher current density, lower operating voltages and higher luminescence	—	—	Qualitative Qualitative	p006 / article p.2544 · Results and discussion · Figure 4