Synthesis · Modification of metal-organic interface using F4-TCNQ for enhanced hole injection properties in optoelectronic devices

3 structured synthesis routes

Completeness describes how fully the route could be reconstructed from the main article and supporting information.

Partial recipeSource: Main

p003 / article p.2541 · Experimental

Metal precursorsAl, In, Ag and Au metal films; commercial ITO-coated glass

SolventsITO cleaning: deionized water, acetone, trichloroethylene and isopropyl alcohol

AdditivesF4-TCNQ molecular acceptor thin film

AtmosphereVacuum deposition at 1 x 10^-5 Torr for metal films; F4-TCNQ deposited at room temperature; KPM in ambient conditions

Temperatureroom temperature for F4-TCNQ deposition

TimeITO ultrasonic cleaning: 20 min each solvent; oxygen plasma: 5 min

Substrate orientationcleaned glass plates and commercial ITO-coated glass

Oxidant / reductantoxygen plasma treatment for ITO

Work-upMetal films exposed to ambient conditions for a short period; ITO cleaned sequentially and plasma-treated before F4-TCNQ deposition

Show 7 structured reagent records

Role	Reagent	Amount / concentration	Source
Other	Al, In, Ag, Au	120 nm films	p003 / article p.2541 · Experimental
Other	ITO coated glass	d about 120 nm; sheet resistance 20 ohm/square	p003 / article p.2541 · Experimental
Additive	F4-TCNQ	0, 1, 3, 5, 7 and 10 nm	p003 / article p.2541 · Experimental
Solvent	deionized water	20 min ultrasonic clean	p003 / article p.2541 · Experimental
Solvent	acetone	20 min ultrasonic clean	p003 / article p.2541 · Experimental
Solvent	trichloroethylene	20 min ultrasonic clean	p003 / article p.2541 · Experimental
Solvent	isopropyl alcohol	20 min ultrasonic clean	p003 / article p.2541 · Experimental

Partial recipeSource: Main

p003 / article p.2541 · Experimental

Metal precursorsITO and Au electrodes

AdditivesF4-TCNQ interlayers on both ITO/HTL and HTL/Au interfaces

AtmosphereOrganic layers deposited at about 10^-5 Torr; measurements in a cryostat in vacuum conditions

Substrate orientationITO bottom electrode

Work-upThickness monitored in situ by quartz crystal thickness monitor

Show 5 structured reagent records

Role	Reagent	Amount / concentration	Source
Additive	F4-TCNQ	x = 0 to 7 nm	p003 / article p.2541 · Experimental
Other	m-MTDATA	250 nm	p003 / article p.2541 · Experimental
Other	spiro-TAD	250 nm	p003 / article p.2541 · Experimental
Other	alpha-NPD	250 nm	p003 / article p.2541 · Experimental
Other	Au	top electrode; thickness not reported for hole-only stack	p003 / article p.2541 · Experimental

Partial recipeSource: Main

p003 / article p.2541 · Experimental

Metal precursorsITO anode and Al cathode

AdditivesF4-TCNQ anode modifier, LiF electron-injection layer

Substrate orientationITO bottom anode

Show 5 structured reagent records

Role	Reagent	Amount / concentration	Source
Additive	F4-TCNQ	x selected from hole-only measurements; 7 nm for alpha-NPD, 1 nm for m-MTDATA and 7 nm for spiro-TAD	p003 / article p.2541 · Experimental
Other	HTL (alpha-NPD, m-MTDATA or spiro-TAD)	30 nm	p003 / article p.2541 · Experimental
Other	Alq3	50 nm	p003 / article p.2541 · Experimental
Other	LiF	1 nm	p003 / article p.2541 · Experimental
Other	Al	100 nm in Experimental; 120 nm in Results text	p003 / article p.2541 · Experimental