Microscopy Morphology — Modification of metal-organic interface using F4-TCNQ for enhanced hole injection properties in optoelectronic devices

Measurement evidence

Microscopy Morphology

Modification of metal-organic interface using F4-TCNQ for enhanced hole injection properties in optoelectronic devices · Rana O., Srivastava R., Chauhan G. et al. · Physica Status Solidi (A) Applications and Materials Science · 2012 · 2539-2545

1 measurement group · 6 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Atomic force microscopy

Atomic force microscopy

F4-TCNQ-coated Al, In, Ag, ITO and Au substrate series · Thin Film

AFM morphology of F4-TCNQ modified ITO substrates at 0, 1, 3, 5, 7 and 10 nm.

Geometry: F4-TCNQ on ITO
Context: model molecular thin films on ITO
Measurement source: p004 / article p.2542 · Results and discussion · Figure 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
F4-TCNQ surface coverage on ITO at 7 nmMarked as a best value within this paper	nearly 100%	—	nearly	Text Approximate	p004 / article p.2542 · Results and discussion · Figure 2
Ag film surface roughness	4.7 nm	—	—	Text Exact Reported	p003 / article p.2541 · Results and discussion
Al film surface roughness	26.4 nm	—	—	Text Exact Reported	p003 / article p.2541 · Results and discussion
Au film surface roughness	5.1 nm	—	—	Text Exact Reported	p003 / article p.2541 · Results and discussion
In film surface roughness	30 nm	—	—	Text Exact Reported	p003 / article p.2541 · Results and discussion
ITO film surface roughness	1.2 nm	—	—	Text Exact Reported	p003 / article p.2541 · Results and discussion