Microscopy Morphology — Semiconducting to Metallic Electronic Landscapes in Defects-Controlled 2D π-d Conjugated Coordination Polymer Thin Films

Measurement evidence

Microscopy Morphology

Semiconducting to Metallic Electronic Landscapes in Defects-Controlled 2D π-d Conjugated Coordination Polymer Thin Films · Ogle J., Lahiri N., Jaye C. et al. · Advanced Functional Materials · 2021 · 2006920

4 measurement groups · 10 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Atomic force microscopy (AFM), Bruker Dimension Icon, tapping mode

Cu-BHT thin film from solid-vapor interfacial CVD polymerization growth · Thin Film

Morphology, roughness, and domain-size assessment for S-V CVD Cu-BHT thin film

Context
pristine framework thin film
Measurement source
4 · Results and Discussion · Figure 2D
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
large-area continuous film size, S-V CVD1 inch x 1 inchText
Exact Reported
4 · Results and Discussion · Figure 2B
AFM crystal domain size range, S-V CVDabout 25 to 50 nmrange upper bound 50 nmText
Range
4 · Results and Discussion · Figure 2D
AFM RMS roughness rq, S-V CVDMarked as a best value within this paperrq = 4.2 nmText
Rounded Reported
4 · Results and Discussion · Figure 2D

AFM thickness linecuts

Cu-BHT thin film from vapor-vapor interfacial CVD polymerization growth · Thin Film

SI Figure S1 compares V-V thicknesses for films reacted two hours and six hours

Context
pristine framework thin films
Measurement source
3 · Supporting Information · Figure S1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
AFM thickness example, V-V CVD 2 h19 nm label for V-V film reacted two hours across a 3-inch areaVisual Estimate
Rounded Reported
3 · Supporting Information · Figure S1A
AFM thickness example, V-V CVD 6 h52 nm label for V-V film reacted six hours across a 3.5-inch areaVisual Estimate
Rounded Reported
3 · Supporting Information · Figure S1B

AFM thickness linecuts

Cu-BHT thin film from solid-vapor interfacial CVD polymerization growth · Thin Film

SI Figure S1 compares S-V thicknesses for Cu(II) precursor films spin-cast at 6000 RPM and 2000 RPM

Context
pristine framework thin films
Measurement source
3 · Supporting Information · Figure S1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
AFM thickness example, S-V CVD 2000 rpm precursor coating41 nm label for S-V precursor spun-cast at 2000 RPMVisual Estimate
Rounded Reported
3 · Supporting Information · Figure S1D
AFM thickness example, S-V CVD 6000 rpm precursor coating15 nm label for S-V precursor spun-cast at 6000 RPMVisual Estimate
Rounded Reported
3 · Supporting Information · Figure S1C

Atomic force microscopy (AFM), Bruker Dimension Icon, tapping mode

Cu-BHT thin film from vapor-vapor interfacial CVD polymerization growth · Thin Film

Morphology, roughness, and domain-size assessment for V-V CVD Cu-BHT thin film

Context
pristine framework thin film
Measurement source
4 · Results and Discussion · Figure 2C
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
large-area continuous film size, V-V CVD1 inch x 1 inchText
Exact Reported
4 · Results and Discussion · Figure 2A
AFM crystal domain size range, V-V CVDMarked as a best value within this paperabout 60 to 100 nmrange upper bound 100 nmText
Range
4 · Results and Discussion · Figure 2C
AFM RMS roughness rq, V-V CVDrq = 17 nmText
Rounded Reported
4 · Results and Discussion · Figure 2C