Two-probe I-V conductivity
Ni3(HITP)2-362 nm/Au/SiO2/Si two-probe film · Thin Film
Keithley 4200 source meter; ambient environment at room temperature; Au electrodes 80 nm thick; 50 um channel gap and 1000 um channel width; conductivity calculated by eq S5.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Electronic conductivity, 205 nm film | 41.8 S m-1 | — | — | SI Table Exact Reported | S-18 / p018 · Supporting Table S2 · Table S2 |
| Electronic conductivity, 290 nm film | 72.1 S m-1 | — | — | SI Table Exact Reported | S-18 / p018 · Supporting Table S2 · Table S2 |
| Electronic conductivity, 362 nm film | 75.4 S m-1 | — | — | SI Table Exact Reported | S-18 / p018 · Supporting Table S2 · Table S2 |
| Electronic conductivity, 435 nm film | 79.8 S m-1 | — | — | SI Table Exact Reported | S-18 / p018 · Supporting Table S2 · Table S2 |
| Electronic conductivity, 524 nm filmMarked as a best value within this paper | 98.0 S m-1 | — | — | SI Table Exact Reported | S-18 / p018 · Supporting Table S2 · Table S2 |