Electrical Transport — 2D Metal–Organic Framework Cu3(HHTT)2 Films for Broadband Photodetectors from Ultraviolet to Mid-Infrared

4 measurement groups · 7 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Optimised 12-cycle Cu3(HHTT)2 film on SiO2/Si · Thin Film

AC conductivity measured from 1 to 20 kHz at room temperature; probe station in glovebox connected to electrochemical workstation.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
AC conductivity frequency exponent	s = 0.95	—	—	Text Exact Reported	p005 · Results and Discussion · Figure S12

Optimised 12-cycle Cu3(HHTT)2 film on SiO2/Si · Thin Film

Cu3(HHTT)2 film on SiO2/Si substrate with prepatterned Au electrodes; channel length 5 um and width 800 um; conductivity measured from 295 to 10 K.

Temperature: 295-10 K
Atmosphere: Probe-station/glovebox context from SI; device measurements in inert N2
Geometry: Au electrodes; channel length 5 um; channel width 800 um
Context: pristine Cu3(HHTT)2 film
Measurement source: p004-p005 · Results and Discussion · Figure 2a,b

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Thermal activation energy from 295-120 K	Ea1 = 0.193 eV	—	—	Text Exact Reported	p004 · Results and Discussion · Figure 2a
Thermal activation energy from 120-90 K	W2 = 0.094 eV	—	—	Text Exact Reported	p005 · Results and Discussion · Figure 2a
Mott variable-range hopping range	55-10 K	—	—	Text Exact Reported	p005 · Results and Discussion · Figure 2b

Optimised 12-cycle Cu3(HHTT)2 film on SiO2/Si · Thin Film

High-bias nonlinear I-V curves fitted to SCLC equation over 255-120 K; dielectric constant assumed 1.5.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
SCLC mobility activation energy	0.075 eV	—	—	Text Exact Reported	p005 · Results and Discussion · Figure 2d

Cu3(HHTT)2 optimum-condition thickness series · Thin Film

Devices with 4, 6, 8, and 12 growth cycles; I_DS versus V_DS from -1 to 1 V.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Approximate I_DS at V_DS = 1 V for 12-cycle filmMarked as a best value within this paper	approximately 480 nA at 1 V from Figure 3b	—	—	Figure Axis Approximate	p006 · Results and Discussion · Figure 3b
I-V linearity / Ohmic contacts	Devices with different thicknesses all exhibit linear I-V curves	—	—	Qualitative Qualitative	p005 · Results and Discussion · Figure 3b; Figure S13