Complete recipeSource: Both
Route 1: Other
p003-p004 · Pre-patterned Substrate preparation; Fabrication of Cu3(HHTT)2 thin film · Figure 1b
Metal precursorsCopper acetate, Cu(OAc)2
Linker precursorsHHTT ligand
SolventsEthanol for optimum films; IPA and DMF used as solvent variants for both precursors
AdditivesOxygen plasma functionalisation of patterned substrate
AtmosphereSubstrates stored and devices measured in N2-filled glovebox; layer-by-layer growth described as under ambient conditions in conclusion.
TemperatureRoom temperature / ambient
Time20 min in copper acetate solution and 40 min in HHTT solution per cycle; oxygen plasma 30 min
Substrate orientation300 nm SiO2/Si or PI prepatterned substrates with 10 nm Cr / 100 nm Au electrodes; substrates functionalised to expose OH groups
Work-upWashed with corresponding solvent to remove excess precursor between each immersion step; process stopped after desired thickness.
ActivationStored in N2-filled glovebox after growth.
Scalability contextWafer-scale films on 4-inch SiO2/Si wafer; film thickness controlled by number of growth cycles at about 11 nm per cycle under optimum ethanolic conditions.
Show 6 structured reagent records
| Role | Reagent | Amount / concentration | Source |
|---|---|---|---|
| Metal Source | Copper acetate / Cu(OAc)2 | 5 mM, 1 mM, or 0.2 mM depending on condition | p003-p004 · Pre-patterned Substrate preparation; Fabrication of Cu3(HHTT)2 thin film · Figure 1b |
| Linker | HHTT | 0.5 mM, 0.1 mM, or 0.02 mM depending on condition | p003-p004 · Pre-patterned Substrate preparation; Fabrication of Cu3(HHTT)2 thin film · Figure 1b |
| Solvent | Ethanol | Solvent for optimum and concentration-series precursor solutions | p003-p004 · Pre-patterned Substrate preparation; Fabrication of Cu3(HHTT)2 thin film · Figure 1b |
| Solvent | IPA | Solvent-control precursor solutions | p003-p004 · Pre-patterned Substrate preparation; Fabrication of Cu3(HHTT)2 thin film · Figure 1b |
| Solvent | DMF | Solvent-control precursor solutions | p003-p004 · Pre-patterned Substrate preparation; Fabrication of Cu3(HHTT)2 thin film · Figure 1b |
| Other | 300 nm SiO2/Si or PI substrate with 10 nm Cr / 100 nm Au electrodes | Not specified | p003-p004 · Pre-patterned Substrate preparation; Fabrication of Cu3(HHTT)2 thin film · Figure 1b |