Ghafari S., Kazemzad M., Naderi N. et al. · Journal of Electronic Materials · 2024 · 1577-1589
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
The Au/ZIF-8/PS device produces higher photocurrent than the Au/ZIF-8/Si control under room-temperature UV illumination.
Caveat: Current-density comparison values were read approximately from figure axes.
5 · Results and Discussion · Fig. 6 · Linked to 2 structured results
Polycrystalline ZIF-8 with dominant (011) orientation was successfully grown on porous Si(100).
Caveat: Assignment is based on XRD peak positions in main text and figure, with no CIF supplied.
1 · Abstract · Linked to 3 structured results
ZIF-8/PS has lower reflectance and narrower PL FWHM than ZIF-8/Si, which the authors attribute to the porous textured substrate and improved optical quality.
Caveat: PL intensity values are not tabulated; only FWHM and qualitative intensity comparison are reported in text.
5 · Results and Discussion · Fig. 5 · Linked to 3 structured results
The porous silicon substrate promotes a compact and homogeneous ZIF-8 layer with nanoscale grains and reduced substrate mismatch.
Caveat: Morphology is FESEM-based; no quantitative roughness or porosity distribution is reported.
4 · Results and Discussion · Fig. 2 · Linked to 3 structured results
Lower temperature improves ZIF-8/PS photodetector sensitivity, voltage responsivity, NEP, detectivity, response speed and bandwidth.
Caveat: Only 250 K and 300 K table values are directly reported; intermediate trends are figure-based.
10 · Conclusion · Linked to 6 structured results
Au/ZIF-8 contacts form a Schottky barrier because Au has a lower work function than ZIF-8, and illumination generates electron-hole pairs that increase photocurrent.
Caveat: Mechanism is schematic and based on reported/literature work functions rather than direct barrier-height extraction.
6 · Results and Discussion · Fig. 7 · Linked to 2 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| Au/ZIF-8 Schottky contactBrowse family: ZIF-8 / Zn(mIm)₂ | Au/ZIF-8Zn nodes in ZIF-8; Au metal electrodes · 2-methylimidazolate | 3D · CompositeBack-to-back Au Schottky contacts on ZIF-8 thin films. | 3 · Experiment |
| Porous silicon substrate | Si | 3D · Model SystemElectrochemically etched n-type Si(100) with porous morphology. | 3 · Experiment |
| ZIF-8Browse family: ZIF-8 / Zn(mIm)₂ | Zn(2-methylimidazolate)2; exact empirical formula not reportedtetrahedrally coordinated Zn nodes from zinc nitrate hexahydrate · 2-methylimidazolate | 3D · PristineZeolitic imidazolate framework with sodalite topology; polycrystalline ZIF-8 thin film with dominant (011) orientation on PS. | 2 · Introduction |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| Au/ZIF-8/PS MSM photodetectorresearch_0556__mat__au_zif8_contact | Electrode · Target Sample · Composite | Back-to-back Au Schottky contacts sputtered on prepared ZIF-8/PS sample.ZIF-8/PS thin film · exposed area about 0.1 cm2; inter-electrode distance 120 um; mask width about 49 um; length about 2.7 mm | 3 · Experiment |
| Au/ZIF-8/Si MSM photodetectorresearch_0556__mat__au_zif8_contact | Electrode · Pristine Control · Composite | Back-to-back Au Schottky contacts sputtered on prepared ZIF-8/Si control sample.ZIF-8/Si thin film | 6 · Results and Discussion · Fig. 6 |
| Porous silicon (PS) substrateresearch_0556__mat__porous_silicon | Thin Film · Pristine Control · Unknown | RCA cleaned, backside Au sputtered/annealed, then electrochemically etched.n-type Si(100), 0.4 ohm cm · pin-shaped pores about 15 um thick; pore size about 900 nm | 3 · Experiment |
| ZIF-8/PS thin filmresearch_0556__mat__zif8 | Thin Film · Target Sample · Composite | Solvothermally deposited ZIF-8 nanostructures grown inside pores of porous silicon and washed with methanol.porous silicon (PS) substrate · ZIF thin film thickness about 170 nm; ZIF grain size about 12 nm | 3 · Experiment |
| ZIF-8/Si thin filmresearch_0556__mat__zif8 | Thin Film · Pristine Control · Composite | Prepared under the same solvothermal ZIF-8 deposition conditions as the ZIF-8/PS sample.non-porous crystalline silicon (c-Si) | 3 · Experiment |