Electrochemistry Application — Metal-organic framework nanosheets for enhanced performance of organic photovoltaic cells

6 measurement groups · 68 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Cyclic voltammetry

Voltammetry

dropcast Zn2(ZnTCPP) MON film · Thin Film

Acetonitrile with tetrabutylammonium perchlorate electrolyte; Ag/Ag+ reference, Pt counter electrode, glassy carbon working electrode; scan rate 100 mV s-1 under Ar.

Temperature: room temperature
Atmosphere: argon
Geometry: MONs dropcast as film on glassy carbon working electrode
Context: pristine MON electrochemical energy levels
Measurement source: 8-9 · 5.2 Cyclic voltammetry · Fig. S8

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
oxidation onset Eox	Eox = 0.601 V vs Ag/Ag+	—	—	Figure Axis Rounded Reported	9 · Fig. S8
reduction onset Ered	Ered = -1.167 V vs Ag/Ag+	—	—	Figure Axis Rounded Reported	9 · Fig. S8
electrochemical band gap	1.80 eV	—	—	Caption Exact Reported	3 · Fig. 2d
HOMO level	-5.3 eV	—	—	Caption Exact Reported	3 · Fig. 2d
LUMO level	-3.5 eV	—	—	Caption Exact Reported	3 · Fig. 2d
LUMO level from Fig. S8 calculation	-3.55 eV	—	—	Figure Axis Rounded Reported	9 · Fig. S8

External quantum efficiency (EQE)

Photoresponse and photoelectrochemistry

optimised P3HT-Zn2(ZnTCPP)-PCBM photovoltaic device · Thin Film

White-light source monochromated by Spectral Products DK240; calibrated silicon photodiode; 400-700 nm range; Xtralien X100 source measure unit.

Temperature: room temperature
Atmosphere: ambient
Geometry: PV active area under monochromatic illumination
Context: MON device compared with reference device
Measurement source: 5-6 · 2.3 Absorption and charge mobility · Fig. 5a

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
EQE integrated Jsc for MON device	9.42 mA/cm2	—	—	Figure Axis Rounded Reported	6 · Fig. 5a
EQE integrated Jsc for reference device	6.16 mA/cm2	—	—	Figure Axis Rounded Reported	6 · Fig. 5a

Illuminated current-density-voltage (J-V) photovoltaic testing

P3HT-PCBM reference photovoltaic device · Thin Film

Same solar-simulator and device-testing conditions as ternary MON devices.

Temperature: room temperature
Atmosphere: ambient
Geometry: ITO/PEDOT:PSS/P3HT-PCBM/BCP(5 nm)/Ag(100 nm)
Context: non-MOF P3HT-PCBM control, average over 35 devices per condition
Measurement source: 17,20 · 7.5 Device testing · Table S1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
fill factor FF	49.21+/-2.50	—	+/- 2.50	SI Table Exact Reported	20 · Table S1
short-circuit current density Jsc	5.25+/-0.31	—	+/- 0.31	SI Table Exact Reported	20 · Table S1
average power conversion efficiency	1.94+/-0.14	—	+/- 0.14	SI Table Exact Reported	20 · Table S1
champion-device power conversion efficiency	2.02	—	—	SI Table Exact Reported	20 · Table S1
open-circuit voltage Voc	0.64+/-0.06	—	+/- 0.06	SI Table Exact Reported	20 · Table S1
fill factor FF	51.64+/-2.74	—	+/- 2.74	SI Table Exact Reported	20 · Table S1
short-circuit current density Jsc	6.11+/-0.40	—	+/- 0.40	SI Table Exact Reported	20 · Table S1
average power conversion efficiency	2.04+/-0.04	—	+/- 0.04	SI Table Exact Reported	20 · Table S1
champion-device power conversion efficiency	2.09	—	—	SI Table Exact Reported	20 · Table S1
open-circuit voltage Voc	0.66+/-0.05	—	+/- 0.05	SI Table Exact Reported	20 · Table S1
fill factor FF	53.21+/-1.70	—	+/- 1.70	SI Table Exact Reported	20 · Table S1
short-circuit current density Jsc	6.5+/-0.23	—	+/- 0.23	SI Table Exact Reported	20 · Table S1
average power conversion efficiency	2.25+/-0.23	—	+/- 0.23	SI Table Exact Reported	20 · Table S1
champion-device power conversion efficiency	2.46	—	—	SI Table Exact Reported	20 · Table S1
open-circuit voltage Voc	0.65+/-0.03	—	+/- 0.03	SI Table Exact Reported	20 · Table S1
fill factor FF	57.44+/-2.20	—	+/- 2.20	SI Table Exact Reported	20 · Table S1
short-circuit current density Jsc	7.09+/-0.15	—	+/- 0.15	SI Table Exact Reported	20 · Table S1
average power conversion efficiencyMarked as a best value within this paper	2.67+/-0.01	—	+/- 0.01	SI Table Exact Reported	20 · Table S1
champion-device power conversion efficiencyMarked as a best value within this paper	2.67	—	—	SI Table Exact Reported	20 · Table S1
open-circuit voltage Voc	0.66+/-0.02	—	+/- 0.02	SI Table Exact Reported	20 · Table S1

Illuminated J-V photovoltaic testing

P3HT-TCPP-ligand-PCBM ternary device · Thin Film

TCPP ligand control device in P3HT-PCBM blend; testing conditions not separately specified, inferred same device testing setup.

Temperature: room temperature
Atmosphere: ambient
Geometry: P3HT/TCPP-ligand/PCBM ternary device
Context: molecular ligand control
Measurement source: 4 · 2.2 Device fabrication · Fig. S16

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
TCPP ligand control FF	55%	—	—	Text Exact Reported	4 · Fig. S16
TCPP ligand control Jsc	6.5 mA cm-2	—	—	Text Exact Reported	4 · Fig. S16
TCPP ligand control PCE	1.93%	—	—	Text Exact Reported	4 · Fig. S16
TCPP ligand control Voc	0.54 V	—	—	Text Exact Reported	4 · Fig. S16

Illuminated current-density-voltage (J-V) photovoltaic testing

optimised P3HT-Zn2(ZnTCPP)-PCBM photovoltaic device · Thin Film

AM 1.5, 1 sun solar simulator; 0.0256 cm2 aperture; calibrated to 100 mW cm-2; bias swept 0.0 to +1.2 V and back at 0.4 V s-1.

Temperature: room temperature
Atmosphere: ambient
Geometry: ITO/PEDOT:PSS/active layer/BCP(5 nm)/Ag(100 nm)
Context: MON-containing ternary PV devices, average over 35 devices per condition
Measurement source: 17,20 · 7.5 Device testing · Table S1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
bulk MOF active-layer control	devices did not function	—	—	Qualitative Qualitative	4
best optimised device FFMarked as a best value within this paper	69%	—	—	Text Rounded Reported	4 · Fig. 3b
best optimised device JscMarked as a best value within this paper	10.8 mA cm-2	—	—	Text Rounded Reported	4 · Fig. 3b
best optimised device PCEMarked as a best value within this paper	5.2%	—	—	Text Rounded Reported	4 · Fig. 3b
best optimised device VocMarked as a best value within this paper	0.69 V	—	—	Text Rounded Reported	4 · Fig. 3b
fill factor FF	50.26+/-1.40	—	+/- 1.40	SI Table Exact Reported	20 · Table S1
short-circuit current density Jsc	6.34+/-0.21	—	+/- 0.21	SI Table Exact Reported	20 · Table S1
average power conversion efficiency	2.27+/-0.23	—	+/- 0.23	SI Table Exact Reported	20 · Table S1
champion-device power conversion efficiency	2.5	—	—	SI Table Exact Reported	20 · Table S1
open-circuit voltage Voc	0.64+/-0.02	—	+/- 0.02	SI Table Exact Reported	20 · Table S1
fill factor FF	59.17+/-1.27	—	+/- 1.27	SI Table Exact Reported	20 · Table S1
short-circuit current density Jsc	8.42+/-0.20	—	+/- 0.20	SI Table Exact Reported	20 · Table S1
average power conversion efficiency	3.24+/-0.35	—	+/- 0.35	SI Table Exact Reported	20 · Table S1
champion-device power conversion efficiency	3.6	—	—	SI Table Exact Reported	20 · Table S1
open-circuit voltage Voc	0.69+/-0.05	—	+/- 0.05	SI Table Exact Reported	20 · Table S1
fill factor FF	35.87+/-3.20	—	+/- 3.20	SI Table Exact Reported	20 · Table S1
short-circuit current density Jsc	7.23+/-0.12	—	+/- 0.12	SI Table Exact Reported	20 · Table S1
average power conversion efficiency	1.87+/-0.02	—	+/- 0.02	SI Table Exact Reported	20 · Table S1
champion-device power conversion efficiency	1.9	—	—	SI Table Exact Reported	20 · Table S1
open-circuit voltage Voc	0.66+/-0.07	—	+/- 0.07	SI Table Exact Reported	20 · Table S1
fill factor FF	60.12+/-0.85	—	+/- 0.85	SI Table Exact Reported	20 · Table S1
short-circuit current density Jsc	8.72+/-0.32	—	+/- 0.32	SI Table Exact Reported	20 · Table S1
average power conversion efficiency	3.63+/-0.15	—	+/- 0.15	SI Table Exact Reported	20 · Table S1
champion-device power conversion efficiency	3.96	—	—	SI Table Exact Reported	20 · Table S1
open-circuit voltage Voc	0.7+/-0.04	—	+/- 0.04	SI Table Exact Reported	20 · Table S1
fill factor FF	62.7+/-0.72	—	+/- 0.72	SI Table Exact Reported	20 · Table S1
short-circuit current density Jsc	9.51+/-0.31	—	+/- 0.31	SI Table Exact Reported	20 · Table S1
average power conversion efficiency	4.06+/-0.10	—	+/- 0.10	SI Table Exact Reported	20 · Table S1
champion-device power conversion efficiency	4.21	—	—	SI Table Exact Reported	20 · Table S1
open-circuit voltage Voc	0.7+/-0.05	—	+/- 0.05	SI Table Exact Reported	20 · Table S1
fill factor FF	63.12+/-0.15	—	+/- 0.15	SI Table Exact Reported	20 · Table S1
short-circuit current density Jsc	10.54+/-0.2	—	+/- 0.2	SI Table Exact Reported	20 · Table S1
average power conversion efficiencyMarked as a best value within this paper	4.65+/-0.30	—	+/- 0.30	SI Table Exact Reported	20 · Table S1
champion-device power conversion efficiencyMarked as a best value within this paper	5.2	—	—	SI Table Exact Reported	20 · Table S1
open-circuit voltage Voc	0.7+/-0.03	—	+/- 0.03	SI Table Exact Reported	20 · Table S1

Laser beam induced current (LBIC) mapping

optimised P3HT-Zn2(ZnTCPP)-PCBM photovoltaic device · Thin Film

405 nm, 3 mW diode laser; power density 27 W/cm2; focused to about 1 um spot; 1 um XY-stage steps; SR830 lock-in amplifier.

Temperature: room temperature
Atmosphere: ambient
Geometry: mapped ternary blend device region
Context: MON ternary device
Measurement source: 4 · 2.2 Device fabrication · Fig. 3c

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
LBIC current distribution	uniform current distribution throughout mapped region	—	—	Qualitative Qualitative	4 · Fig. 3c