Out-of-plane XRD and grazing-incidence in-plane XRD
HITP-Ni-NS_1 min · Nanosheet
HITP-Ni-NS deposited on Si substrates; synchrotron X-ray source lambda = 1.24 Angstrom, helium flow; additional SmartLab Cu K-alpha measurements.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Interlayer pi-pi stacking distance | d = 3.22(1) Angstrom | — | 0.01 Angstrom | Caption Exact Reported | 3 (journal p. 771) · Figure 1 caption · Fig. 1 |
| In-plane metrically hexagonal lattice parameter a = b | a = b = 21.36(1) Angstrom; later text gives a = b ~21.4 Angstrom | — | 0.01 Angstrom | Caption Exact Reported | 2-3 (journal pp. 770-771) · Introduction and Fig. 1 caption · Fig. 1 |
| XRD-derived interlayer distance | d ~3.2 Angstrom | — | — | Text Approximate | 12 (journal p. 780) · 3.1.7 Effect on crystal structure and orientation · Fig. 8a-c |
| Out-of-plane XRD layer-stacking peak Q | Q ~1.9 A-1 | — | — | Text Approximate | 12 (journal p. 780) · 3.1.7 Effect on crystal structure and orientation · Fig. 8a-c |