Spectroscopy — Air/liquid interfacial formation process of conductive metal–organic framework nanosheets

3 measurement groups · 8 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Infrared absorption spectroscopy

Infrared spectroscopy

HITP-Ni-NS_1 min · Nanosheet

HITP-Ni-NS, HITP-Ni_subphase and HATP-water-NS on high-resistivity Si; HATP, Ni(OAc)2.4H2O and Ni3(HITP)2 bulk powder by KBr method; in vacuo at room temperature.

Temperature: room temperature
Atmosphere: in vacuo
Geometry: Si substrates or KBr plates
Context: standing-time series, subphase and bulk/control powders
Measurement source: S37 · Fig. S31 caption · Fig. S31

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
CN stretching band in coordinated HITP-Ni materials	1330 cm-1	—	—	Caption Rounded Reported	S37 · Fig. S31 caption · Fig. S31
NH bending band for IR comparison	1640 cm-1	—	—	Caption Rounded Reported	S37 · Fig. S31 caption · Fig. S31

UV-vis-near IR absorption spectroscopy

Infrared spectroscopy UV-visible and optical absorption spectroscopy

HITP-Ni-NS_1 min · Nanosheet

HITP-Ni-NS samples transferred to quartz substrates at pi = 5 mN m-1 with one deposition cycle; room temperature in air.

Temperature: room temperature
Atmosphere: air
Geometry: quartz substrate
Context: all standing-time HITP-Ni-NS samples plus controls
Measurement source: 6 (journal p. 774) · 3.1.3 Ex-situ qualitative investigation · Fig. 4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Charge-transfer transition band wavelength	around 1300 nm	—	—	Text Approximate	6 (journal p. 774) · 3.1.3 Ex-situ qualitative investigation · Fig. 4a
*d-d transition band wavelength**	around 650 nm	—	—	Text Approximate	6 (journal p. 774) · 3.1.3 Ex-situ qualitative investigation · Fig. 4a

X-ray photoelectron spectroscopy, Al K-alpha

X-ray photoelectron spectroscopy

HITP-Ni-NS_1 min · Nanosheet

HITP-Ni-NS, HITP-Ni_subphase and HATP powder on Si substrates; binding energies calibrated to triphenylene C 1s at 284.3-284.4 eV.

Temperature: room temperature
Atmosphere: ultra-high vacuum
Geometry: Si substrates fixed to circular stages
Context: standing-time series and subphase control
Measurement source: 10-11 (journal pp. 778-779) · 3.1.6 Influences on stoichiometry and bonding/electronic state · Fig. 7

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Nhigh N 1s component	around 399.0 eV	—	—	Text Approximate	11 (journal p. 779) · 3.1.6 Influences on stoichiometry and bonding/electronic state · Fig. 7d
Ni 2p3/2 main peak centre	855 eV	—	—	Text Rounded Reported	11 (journal p. 779) · 3.1.6 Influences on stoichiometry and bonding/electronic state · Fig. 7b
Ni 2p3/2 satellite peak centre	861 eV	—	—	Text Rounded Reported	11 (journal p. 779) · 3.1.6 Influences on stoichiometry and bonding/electronic state · Fig. 7b
Nlow N 1s component	around 397.5 eV	—	—	Text Approximate	11 (journal p. 779) · 3.1.6 Influences on stoichiometry and bonding/electronic state · Fig. 7d