cMOF Evidence Base
Electrical Transport — Air/liquid interfacial formation process of conductive metal–organic framework nanosheets

Measurement evidence

Electrical Transport

Air/liquid interfacial formation process of conductive metal–organic framework nanosheets · Ohata T., Nomoto A., Watanabe T. et al. · Journal of Colloid and Interface Science · 2023 · 769-784

2 measurement groups · 8 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Planar conductance versus deposition surface pressure

HITP-Ni-NS_60 min · Nanosheet

HITP-Ni-NS_60 min deposited onto SiO2/Si with five deposition cycles at different surface pressures.

Temperature
room temperature
Atmosphere
dark measurement; devices stored under Ar for stability test
Geometry
Au/HITP-Ni-NS/Au planar device
Context
pristine HITP-Ni-NS_60 min
Measurement source
S41 · Fig. S35 caption · Fig. S35
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Conductance of HITP-Ni-NS_60 min device deposited at pi = 10 mN m-1Marked as a best value within this paperabout 0.6 x 10^-3 Ohm-1—visual estimate from Fig. S35Figure Axis
Approximate		12 (journal p. 780) · 3.3.1 Planar current-voltage characteristic · Fig. S35
Conductance of HITP-Ni-NS_60 min device deposited at pi = 30 mN m-1Marked as a best value within this paperabout 0.6 x 10^-3 Ohm-1—visual estimate from Fig. S35Figure Axis
Approximate		12 (journal p. 780) · 3.3.1 Planar current-voltage characteristic · Fig. S35
Conductance of HITP-Ni-NS_60 min device deposited at pi = 5 mN m-1about 0.2 x 10^-3 Ohm-1—visual estimate from Fig. S35Figure Axis
Approximate		S41 · Fig. S35 caption · Fig. S35

Planar current-voltage measurement with Keithley 2401

Electrical conductivity

HITP-Ni-NS_1 min · Nanosheet

HITP-Ni-NS deposited onto SiO2(100 nm)/Si substrates with five deposition cycles at pi = 5 mN m-1; Au stripe electrodes by vacuum evaporation; measurements in dark.

Temperature
room temperature
Atmosphere
dark, ambient measurement after device fabrication
Geometry
Au/HITP-Ni-NS/Au planar device; channel length 100 um, channel width 4 mm; two devices per substrate and more than four devices per condition
Context
standing-time series of pristine HITP-Ni-NS films
Measurement source
12-13 (journal pp. 780-781) · 3.3.1 Planar current-voltage characteristic · Fig. 10
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Log10 conductance for HITP-Ni-NS_120 min devicelog(conductance / Ohm-1) about -3.20.000631 Ohm-1visual estimate from Fig. 10cFigure Axis
Approximate		13 (journal p. 781) · 3.3.1 Planar current-voltage characteristic · Fig. 10c
Log10 conductance for HITP-Ni-NS_180 min deviceMarked as a best value within this paperlog(conductance / Ohm-1) about -2.450.00355 Ohm-1visual estimate from Fig. 10cFigure Axis
Approximate		13 (journal p. 781) · 3.3.1 Planar current-voltage characteristic · Fig. 10c
Log10 conductance for HITP-Ni-NS_1 min devicelog(conductance / Ohm-1) about -5.250.0000056 Ohm-1visual estimate from Fig. 10cFigure Axis
Approximate		13 (journal p. 781) · 3.3.1 Planar current-voltage characteristic · Fig. 10c
Log10 conductance for HITP-Ni-NS_240 min devicelog(conductance / Ohm-1) about -2.650.00224 Ohm-1visual estimate from Fig. 10cFigure Axis
Approximate		13 (journal p. 781) · 3.3.1 Planar current-voltage characteristic · Fig. 10c
Log10 conductance for HITP-Ni-NS_60 min devicelog(conductance / Ohm-1) about -3.650.000224 Ohm-1visual estimate from Fig. 10cFigure Axis
Approximate		12 (journal p. 780) · 3.3.1 Planar current-voltage characteristic · Fig. 10c