YAeHMOP/DynEMol interfacial electron-transfer simulations
H4TTFTB on TiO2 interfacial model · Model
Flat, long and tall H4TTFTB-on-TiO2 orientations; dynamics calculated every 0.1 fs for 100 fs with absorbing potential in bottom TiO2 layer.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Electron density transfer snapshot | some density moved from ligand to TiO2 at 27 fs | — | snapshot time | Text Exact Reported | 9598 · Zn2TTFTB as a photosensitizing array · Figure 7 |
| Calculated interfacial electron injection timescaleMarked as a best value within this paper | <100 fs | — | < | Text Approximate | 9599 · Zn2TTFTB as a photosensitizing array · Figure 7; Figure S13 |
| Isolated TiO2 conduction band edge | 0.21 eV | — | — | Text Exact Reported | 9598 · Zn2TTFTB as a photosensitizing array · Figure 6 |