Electrical Transport — Processable UiO-66 Metal-Organic Framework Fluid Gel and Electrical Conductivity of Its Nanofilm with Sub-100 nm Thickness

3 measurement groups · 24 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Temperature-dependent I-V / Arrhenius analysis

Electrical conductivity

Al/UiO-66/Al thin-film devices · Electrode

Measured in conventional oven from 30 to 60 C; activation energy calculated from Arrhenius slope using SI eq S1.

Temperature: 303-333
Atmosphere: conventional oven
Geometry: Al/UiO-66/Al device
Context: 60 nm and 150 nm pristine UiO-66 nanofilm devices
Measurement source: p002,p005 / 30845,30848 · I-V Measurements; Results and Discussion · Figure 5e; Figure S9; Eq S1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
activation energy, 150 nm film	0.18 eV	—	—	Text Exact Reported	p005 / 30848 · Results and Discussion · Figure 5e; Figure S9
activation energy, 60 nm filmMarked as a best value within this paper	0.10 eV	—	—	Text Exact Reported	p005 / 30848 · Results and Discussion · Figure 5e; Figure S9

Electrochemical impedance spectroscopy (EIS) / complex impedance with NOVA fitting

Impedance spectroscopy

Al/UiO-66/Al thin-film devices · Electrode

Same devices as I-V; frequency range 10 Hz-1 MHz; sinusoidal voltage amplitude 10 mV; room temperature; fitted with R1-(R2||C1) circuit.

Temperature: room temperature
Geometry: Al/UiO-66/Al sandwich, device area 0.04 cm2
Context: pristine UiO-66 nanofilm active layer with Al contacts
Measurement source: p003,p005 / 30846,30848 · EIS Measurements; Results and Discussion · Figure S7; Figure S8; Table S2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
EIS C1, 40 nm film	46.2 x 10^-9 F	4.62e-8 F	—	SI Table Exact Reported	p008 / SI p8 · Table S2 · Table S2
EIS conductivity, 120 nm film	0.016 x 10^-5 S cm-1	—	—	SI Table Exact Reported	p008 / SI p8 · Table S2 · Table S2
EIS conductivity, 150 nm film	0.014 x 10^-5 S cm-1	—	—	SI Table Exact Reported	p008 / SI p8 · Table S2 · Table S2
EIS conductivity, 40 nm filmMarked as a best value within this paper	1.070 x 10^-5 S cm-1	—	—	SI Table Exact Reported	p008 / SI p8 · Table S2 · Table S2
EIS conductivity, 60 nm film	0.930 x 10^-5 S cm-1	—	—	SI Table Exact Reported	p008 / SI p8 · Table S2 · Table S2
EIS conductivity, 80 nm film	0.760 x 10^-5 S cm-1	—	—	SI Table Exact Reported	p008 / SI p8 · Table S2 · Table S2
EIS R1, 40 nm film	11.9 ohm	—	—	SI Table Exact Reported	p008 / SI p8 · Table S2 · Table S2
EIS R2, 40 nm film	9.4 ohm	—	—	SI Table Exact Reported	p008 / SI p8 · Table S2 · Table S2

Current-voltage (I-V) measurement using Autolab PGSTAT302N with FRA32M

Electrical conductivity

Al/UiO-66/Al thin-film devices · Electrode

Applied voltage -2.0 to 2.0 V, scan rate 50 mV s^-1, room temperature; alligator clips connected to Al electrodes.

Temperature: room temperature
Geometry: Al/UiO-66/Al sandwich; 40 nm Al anode and cathode; device area 0.04 cm2
Context: pristine UiO-66 nanofilm active layer with Al contacts
Measurement source: p002,p005 / 30845,30848 · I-V Measurements; Results and Discussion · Figure 5c,d; Table S1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
bulk UiO-66 powder conductivity comparison	1.52 x 10^-7 S cm-1	—	—	Text Exact Reported	p005 / 30848 · Results and Discussion · Table S1
I-V conductivity, 120 nm film	0.019 x 10^-5 S cm-1	—	—	SI Table Exact Reported	p008 / SI p8 · Table S1 · Table S1
I-V conductivity, 150 nm film	0.019 x 10^-5 S cm-1	—	—	SI Table Exact Reported	p008 / SI p8 · Table S1 · Table S1
I-V conductivity, 40 nm filmMarked as a best value within this paper	1.000 x 10^-5 S cm-1	—	—	SI Table Exact Reported	p008 / SI p8 · Table S1 · Table S1
I-V conductivity, 60 nm film	0.630 x 10^-5 S cm-1	—	—	SI Table Exact Reported	p008 / SI p8 · Table S1 · Table S1
I-V conductivity, 80 nm film	0.610 x 10^-5 S cm-1	—	—	SI Table Exact Reported	p008 / SI p8 · Table S1 · Table S1
I-V resistance, 120 nm film	1547.6 ohm	—	—	SI Table Exact Reported	p008 / SI p8 · Table S1 · Table S1
I-V resistance, 150 nm film	1949.3 ohm	—	—	SI Table Exact Reported	p008 / SI p8 · Table S1 · Table S1
I-V resistance, 40 nm film	11.1 ohm	—	—	SI Table Exact Reported	p008 / SI p8 · Table S1 · Table S1
I-V resistance, 60 nm film	23.7 ohm	—	—	SI Table Exact Reported	p008 / SI p8 · Table S1 · Table S1
I-V resistance, 80 nm film	33.1 ohm	—	—	SI Table Exact Reported	p008 / SI p8 · Table S1 · Table S1
Table S3 literature MOF-808 powder conductivity comparison	0.12 x 10^-5 S cm-1	—	—	SI Table Exact Reported	p008 / SI p8 · Table S3 · Table S3
Table S3 literature UiO-66 powder conductivity comparison	0.15 x 10^-5 S cm-1	—	—	SI Table Exact Reported	p008 / SI p8 · Table S3 · Table S3
conductivity increase for sub-100 nm films vs bulk	increased by 100 times compared to bulk form when film thickness was less than 100 nm	—	—	Text Rounded Reported	p006 / 30849 · Conclusions