finite-difference time-domain (FDTD) simulation
AgNPs/Ni3(HHTP)2 SERS substrate on silicon wafer · Thin Film
PML in x, y, z; 2 nm x 2 nm x 2 nm grid; full-field scattered plane wave at 633 nm.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| crystal violet HOMO level in mechanism schematic | -6.0 eV HOMO | — | — | Visual Estimate Approximate | 10 · SERS Enhancement mechanism · Figure 9(c) |
| crystal violet LUMO level in mechanism schematic | -4.1 eV LUMO | — | — | Visual Estimate Approximate | 10 · SERS Enhancement mechanism · Figure 9(c) |
| simulated electric-field enhancement excluding maximum regions | around 6 | — | — | Text Approximate | 11 · SERS Enhancement mechanism · Figure S13 |
| FDTD grid size | 2 nm x 2 nm x 2 nm | — | — | Text Exact Reported | 10 · SERS Enhancement mechanism · Figure S11 |
| incident laser photon energy used in charge-transfer discussion | 1.96 eV at 633 nm | — | — | Text Rounded Reported | 11 · SERS Enhancement mechanism · Figure 9(c) |
| Ni3(HHTP)2 band gap in mechanism schematic | Eg = 0.18 eV | — | — | Visual Estimate Approximate | 10 · SERS Enhancement mechanism · Figure 9(c) |