Reported material

High-k oxide/CuSCN BG-TC thin-film transistor stacks

This group combines only harmless case, dash and spacing variants of the reported identity. It does not assert a broader chemical equivalence without source review.

1primary papers
1material records
15linked samples
25linked measurements
176linked results
2024–2024publication span

Evidence coverage

Paper counts are material-linked through samples and measurements; technique groups are not value rankings.

Publication timeline

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Primary papers

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1 papers

Per-paper identity records

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Show 1 material identity record
Paper and reported nameFormula and componentsStructure contextSource
High-k oxide/CuSCN BG-TC thin-film transistor stacks2024 · Engineering High-k Oxide/CuSCN Interface for p-Channel Thin-Film Transistorsglass/Al/dielectric/CuSCN/AuCu(I) in CuSCN plus Al, Ga, or Hf oxide dielectric component · thiocyanate in CuSCN; optional MAA or TEOS surface modification layerunknown · CompositeBottom-gate top-contact TFT stack with glass/Al/dielectric/CuSCN/Au layer order.p.9 · 4.10. Device Fabrication · Section 4.10