Electrical Transport — A one-dimensional conductive metal-organic framework with extended π-d conjugated nanoribbon layers

Measurement evidence

Electrical Transport

A one-dimensional conductive metal-organic framework with extended π-d conjugated nanoribbon layers · Shang S., Du C., Liu Y. et al. · Nature Communications · 2022 · 7599

2 measurement groups · 8 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

two-terminal I-V conductivity

Electrical conductivity

DDA-Cu film two-terminal device on Si/SiO2 · Thin Film

Si/SiO2 transferred film; l=50 um, d=1400 um, h~8 nm; room temperature

Temperature: 297
Atmosphere: N2
Geometry: two-terminal Au-electrode device
Measurement source: 5 · Electrical properties · Supplementary Fig. 17; Supplementary Tables 2-3

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
electrical conductivityMarked as a best value within this paper	9.4 S m-1	—	—	SI Table Exact Reported	24 · Supplementary Table 2 · Supplementary Table 2
I-V contact behaviour	linear and symmetric I-V curves; ohmic contacts	—	—	Qualitative Qualitative	5 · Electrical properties · Supplementary Fig. 17

variable-temperature conductance, Hall and Mott-Schottky

Mott-Schottky analysis Hall-effect measurements

DDA-Cu film two-terminal device on Si/SiO2 · Thin Film

conductance 25-350 K; Hall at 298 K; van der Pauw

Temperature: 25-350; Hall 298
Measurement source: 12-13 · Supplementary Figs. 21-22 and Table 6 · Supplementary Figs. 21-22; Table 6

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
average carrier densityMarked as a best value within this paper	3.10587E17 cm-3	—	—	SI Table Exact Reported	27 · Supplementary Table 6 · Supplementary Table 6
carrier type	n-type	—	—	SI Table Qualitative	27 · Supplementary Table 6 · Supplementary Table 6
average Hall coefficient	-20.10959 cm3/C	—	—	SI Table Exact Reported	27 · Supplementary Table 6 · Supplementary Table 6
average Hall mobilityMarked as a best value within this paper	0.31604 cm2/Vs	—	—	SI Table Exact Reported	27 · Supplementary Table 6 · Supplementary Table 6
Mott-Schottky slope sign	positive slope, indicating n-type semiconductor	—	—	Text Qualitative	13 · Supplementary Fig. 22 text · Supplementary Fig. 22b
temperature-dependent conductance behaviour	conductance increases from 25 K to 340 K; linear ln(G) vs 1000/T from 210-350 K	—	—	Qualitative Qualitative	12 · Supplementary Fig. 21 text · Supplementary Fig. 21