Synthesis · A one-dimensional conductive metal-organic framework with extended π-d conjugated nanoribbon layers

4 structured synthesis routes

Completeness describes how fully the route could be reconstructed from the main article and supporting information.

Complete recipeSource: Both

Route 1: Other

7 · Methods - Synthesis of DDA-Cu MOF crystals

Metal precursors22.2 mg Cu(CH3COO)2·H2O in 400 mL ethanol + 100 mL water (solution B)

Linker precursors30 mg DDA in 400 mL ethanol + 100 mL water (solution A)

Solventsethanol and water

Additivesacetate from copper acetate; no separate additive reported

Atmospherenormal pressure; ambient oxygen involved in amino oxidation mechanism

Temperature90

Time24

Substrate orientationnone

Oxidant / reductantO2 in air oxidises amino groups; deprotonation/oxidation mechanism in SI

Work-upsolution A sonicated 30 min; solution B added at about 2 drops/s under stirring; centrifuged at 9000 rpm; washed/centrifuged with ethanol and water until supernatant clear

Activationvacuum oven drying at 90 C for 12 h

Scalability contextisolated yields 85-92%

Show 5 structured reagent records

Role	Reagent	Amount / concentration	Source
Linker	DDA	30 mg · 400 mL ethanol + 100 mL water	7 · Methods - Synthesis of DDA-Cu MOF crystals
Metal Source	Cu(CH3COO)2·H2O	22.2 mg · 400 mL ethanol + 100 mL water	7 · Methods - Synthesis of DDA-Cu MOF crystals
Solvent	ethanol	800 mL total	7 · Methods - Synthesis of DDA-Cu MOF crystals
Solvent	water	200 mL total	7 · Methods - Synthesis of DDA-Cu MOF crystals
Oxidant	O2 / air	not quantified · ambient	7 · Methods - Synthesis of DDA-Cu MOF crystals

Partial recipeSource: Main

Route 2: Other

8 · Methods - Electronic device

Metal precursorspreformed DDA-Cu film

Linker precursorsnot applicable

Solventswater and ethanol for substrate cleaning

Additives30 nm Au interdigital electrodes

Atmospheresubstrates dried with nitrogen; I-V measured in N2

Temperatureroom temperature measurement

Timenot applicable

Substrate orientationSiO2/Si with 300 nm SiO2; PET for flexible devices

Oxidant / reductantnone

Work-upfilm transferred to substrates coated with interdigital electrodes

Activationsubstrates cleaned by immersion in water and ethanol and dried with nitrogen

Scalability contextdevice geometry reported; transfer protocol sparse

Show 4 structured reagent records

Role	Reagent	Amount / concentration	Source
Other	DDA-Cu film	12 h growth film for I-V tests · about 8 nm thick	8 · Methods - Electronic device
Other	SiO2/Si substrate	300 nm SiO2	8 · Methods - Electronic device
Other	Au electrodes	30 nm	8 · Methods - Electronic device
Solvent	water and ethanol	not reported · cleaning	8 · Methods - Electronic device

Complete recipeSource: Main

Route 3: Other

8 · Methods - Electrochemical measurement

Metal precursorspre-synthesised DDA-Cu crystals

Linker precursorsnot applicable

Solventsnot specified in main electrode recipe

AdditivesPTFE and conductive carbon black

Atmospherenot reported

Temperature90

Time8

Substrate orientationcoated on nickel foam

Oxidant / reductantnone

Work-upmixed and ground into jelly; coated on 1 x 1 cm nickel foams

Activationdried at 90 C for 8 h and fully dried

Scalability contextabout 4 mg active material for one single electrode

Show 4 structured reagent records

Role	Reagent	Amount / concentration	Source
Other	DDA-Cu crystals	mass ratio 7; about 4 mg active material	8 · Methods - Electrochemical measurement
Additive	polytetrafluoroethylene	mass ratio 1	8 · Methods - Electrochemical measurement
Additive	conductive carbon black	mass ratio 2	8 · Methods - Electrochemical measurement
Other	nickel foam	1 x 1 cm	8 · Methods - Electrochemical measurement

Complete recipeSource: Main

Route 4: Liquid Liquid Interface

7 · Methods - Synthesis of DDA-Cu MOF film

Metal precursors13.5 mg Cu(CH3COO)2·H2O in 100 mL H2O top layer

Linker precursors5.5 mg DDA in 200 mL CH2Cl2 bottom layer

SolventsCH2Cl2 and H2O

Additivesnone reported

Atmosphereambient / not explicitly controlled

Temperaturenot reported

Time72

Substrate orientationfilm formed at liquid-liquid interface and then transferred to target substrate

Oxidant / reductantnone separately added

Work-upstand for 3 days; stable large-area DDA-Cu MOF film forms at interface

Activationnot reported

Scalability contextstable large-area film reported

Show 4 structured reagent records

Role	Reagent	Amount / concentration	Source
Linker	DDA	5.5 mg · 200 mL CH2Cl2	7 · Methods - Synthesis of DDA-Cu MOF film
Metal Source	Cu(CH3COO)2·H2O	13.5 mg · 100 mL H2O	7 · Methods - Synthesis of DDA-Cu MOF film
Solvent	CH2Cl2	200 mL · bottom layer	7 · Methods - Synthesis of DDA-Cu MOF film
Solvent	H2O	100 mL · top layer	7 · Methods - Synthesis of DDA-Cu MOF film