Diffraction Structure — Electrochemical deposition and thermoelectric characterisation of a semiconducting 2-D metal-organic framework thin film

3 measurement groups · 23 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

GIXRD

X-ray diffraction and scattering

Cu3(HHTP)2@Au/SiO2 as-deposited film · Thin Film

As-deposited Cu3(HHTP)2 on Au/SiO2 and PMMA-transferred film

Geometry: thin film on Au/SiO2 and transferred film
Context: as-deposited pristine film and transferred PMMA-MOF film
Measurement source: 13 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Au/SiO2 substrates · Figure 7

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Au/SiO2 film GIXRD 002 peak	2theta = 27.86 deg	—	—	Text Exact Reported	13 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Au/SiO2 substrates · Figure 7
Au/SiO2 film GIXRD 100 peak	2theta = 4.79 deg	—	—	Text Exact Reported	13 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Au/SiO2 substrates · Figure 7
Au/SiO2 film GIXRD 200 peak	2theta = 9.56 deg	—	—	Text Exact Reported	13 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Au/SiO2 substrates · Figure 7
Au/SiO2 film GIXRD 210 peak	2theta = 12.59 deg	—	—	Text Exact Reported	13 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Au/SiO2 substrates · Figure 7
PMMA transferred film broad amorphous peak	13 deg	—	—	Text Exact Reported	13 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Au/SiO2 substrates · Figure 7

PXRD; Bruker D2 phaser, CuKalpha radiation; Rietveld refinement using GSAS-II

X-ray diffraction and scattering

Hydrothermal Cu3(HHTP)2 powder · Powder

Bulk powder on zero-background Si holder; refined to P6/mmm hexagonal AA model

Context: pristine Cu3(HHTP)2 bulk powder
Measurement source: 2 · Characterisations · Figure S2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Bulk interlayer distance	3.10 A	3.1 angstrom	—	Text Exact Reported	6 · Hydrothermal synthesis of bulk Cu3(HHTP)2 · Figure 2a
Bulk lattice parameter a	a = 21.14 A	21.14 angstrom	—	Text Exact Reported	6 · Hydrothermal synthesis of bulk Cu3(HHTP)2 · Figure S2
Bulk lattice parameter c	c = 3.13 A	3.13 angstrom	—	Text Exact Reported	6 · Hydrothermal synthesis of bulk Cu3(HHTP)2 · Figure S2
PXRD 001 broad peak position	2theta = 28.84 deg	—	—	Text Exact Reported	5 · Hydrothermal synthesis of bulk Cu3(HHTP)2 · Figure 2a
PXRD 100 peak position	2theta = 4.95 deg	—	—	Text Exact Reported	5 · Hydrothermal synthesis of bulk Cu3(HHTP)2 · Figure 2a
PXRD 200 peak position	2theta = 9.76 deg	—	—	Text Exact Reported	5 · Hydrothermal synthesis of bulk Cu3(HHTP)2 · Figure 2a
PXRD 210 peak position	2theta = 12.82 deg	—	—	Text Exact Reported	5 · Hydrothermal synthesis of bulk Cu3(HHTP)2 · Figure 2a
PXRD 220 peak position	2theta = 16.73 deg	—	—	Text Exact Reported	5 · Hydrothermal synthesis of bulk Cu3(HHTP)2 · Figure 2a

GIXRD; Rigaku Smartlab, CuKalpha radiation

X-ray diffraction and scattering

Cu3(HHTP)2@FTO film, 0.435 V · Thin Film

Electrodeposited Cu3(HHTP)2 on FTO at different applied potentials

Geometry: thin film on FTO
Context: pristine electrodeposited Cu3(HHTP)2 films
Measurement source: 9 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Transparent Conducting Substrates · Figure 4; Table S3

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
FTO film crystal/domain size at 0.435 VMarked as a best value within this paper	100 A	10 nm	—	Text Exact Reported	10 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Transparent Conducting Substrates · Figure 4; Table S3
FTO film crystal/domain size at 0.5 V	30 A	3 nm	—	Text Exact Reported	10 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Transparent Conducting Substrates · Figure 4; Table S3
FTO film crystal/domain size at 0.6 V	24 A	2.4 nm	—	Text Exact Reported	10 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Transparent Conducting Substrates · Figure 4; Table S3
FTO film crystal/domain size at 0.7 V	18 A	1.8 nm	—	Text Exact Reported	10 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Transparent Conducting Substrates · Figure 4; Table S3
FTO-film GIXRD 002 reflection	~28 deg 2theta	—	—	Text Approximate	9 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Transparent Conducting Substrates · Figure 4
FTO-film GIXRD 100 reflection	~4.86 deg 2theta	—	—	Text Approximate	9 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Transparent Conducting Substrates · Figure 4
FTO-film GIXRD 200 reflection	~9.6 deg 2theta	—	—	Text Approximate	9 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Transparent Conducting Substrates · Figure 4
FTO-film GIXRD 210 reflection	~12.7 deg 2theta	—	—	Text Approximate	9 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Transparent Conducting Substrates · Figure 4
Effect of applied potential on crystallinity	crystallinity appears to decrease as potential increases	—	—	Qualitative Qualitative	10 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Transparent Conducting Substrates · Figure 4; Table S3
FTO film interlayer distance at 0.435 V	3.17 A	3.17 angstrom	—	Text Exact Reported	10 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Transparent Conducting Substrates · Figure 4