Microscopy Morphology — Electrochemical deposition and thermoelectric characterisation of a semiconducting 2-D metal-organic framework thin film

5 measurement groups · 12 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Cu3(HHTP)2@Au/SiO2 as-deposited film · Thin Film

Electrodeposited Cu3(HHTP)2 thin film on Au/SiO2

Geometry: thin film on Au/SiO2
Context: pristine as-deposited Cu3(HHTP)2 film
Measurement source: 14 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Au/SiO2 substrates · Figure 8

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Au/SiO2 film nanorod size	~85 nm	0.085 um	—	Text Approximate	13 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Au/SiO2 substrates · Figure 8b,c
Au/SiO2 film spherical particle average diameter	~6 um	6 um	—	Text Approximate	13 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Au/SiO2 substrates · Figure 8a
Au/SiO2 film thickness	~5 um	5 um	—	Text Approximate	13 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Au/SiO2 substrates · Figure 8d

Hydrothermal Cu3(HHTP)2 powder · Powder

JEOL JSM-6500F; morphology and thickness characterisation

Context: pristine Cu3(HHTP)2 bulk powder
Measurement source: 7 · Hydrothermal synthesis of bulk Cu3(HHTP)2 · Figures 2c and S3

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Hydrothermal powder particle size	~700 nm	0.7 um	—	Text Approximate	7 · Hydrothermal synthesis of bulk Cu3(HHTP)2 · Figure 2c; Figure S3
Hydrothermal powder platelet thickness	190 nm	0.19 um	—	Text Approximate	7 · Hydrothermal synthesis of bulk Cu3(HHTP)2 · Figure 2c; Figure S3

Cu3(HHTP)2@FTO film, 0.435 V · Thin Film

Electrodeposited Cu3(HHTP)2 films on FTO at 0.435, 0.5, 0.6 and 0.7 V

Geometry: thin film on FTO
Context: pristine electrodeposited Cu3(HHTP)2 films
Measurement source: 11 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Transparent Conducting Substrates · Figure 5

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
FTO film thickness at 0.435 V	ca. 4 um	4 um	—	Text Approximate	10 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Transparent Conducting Substrates · Figure 5a
FTO film thickness at 0.5 V, range maximum	6.8 um maximum in 3.8-6.8 um range	6.8 um	—	Text Range	10 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Transparent Conducting Substrates · Figure 5b
FTO film thickness at 0.5 V, range minimum	3.8 um minimum in 3.8-6.8 um range	3.8 um	—	Text Range	10 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Transparent Conducting Substrates · Figure 5b
FTO film thickness at 0.6 VMarked as a best value within this paper	~7 um	7 um	—	Text Approximate	10 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Transparent Conducting Substrates · Figure 5c
FTO film thickness at 0.7 V	~6.5 um	6.5 um	—	Text Approximate	10 · Anodic Electrosynthesis of Cu3(HHTP)2 onto Transparent Conducting Substrates · Figure 5d

Cu3(HHTP)2 pressed pellet · Pellet

Top-view and cross-sectional SEM of pressed pellet

Geometry: pressed pellet
Context: pristine Cu3(HHTP)2 pellet
Measurement source: 7 · Hydrothermal synthesis of bulk Cu3(HHTP)2 · Figures 2d and S4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Pressed pellet compactness	high densification; grain boundaries and some cracking observed	—	—	Qualitative Qualitative	7 · Hydrothermal synthesis of bulk Cu3(HHTP)2 · Figure 2d; Figure S4

PMMA-transferred Cu3(HHTP)2 thin film · Thin Film

PMMA-transferred film; cross-section also imaged using epoxy transfer variant

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Transferred film cross-section thickness	~5 um	5 um	—	Text Approximate	14 · Thermoelectric measurements of electrodeposited Cu3(HHTP)2 films · Figure S10