Microscopy Morphology — Enhancing Electrical Conductivity of Semiconducting MOFs via Defect Healing

4 measurement groups · 8 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

HAB-treated Cu3(HAB)2, 30 min · Pellet

TEM at 300 kV; dose rate maintained between 20 and 50 e Angstrom^-2 s^-1.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
d100 spacing	d100 = 11.6 Angstrom	—	—	Text Exact Reported	3 · Results and Discussion · Figure 2d,e
hexagonal pore size	~7 Angstrom	—	—	Text Approximate	3 · Results and Discussion · Figure 2d,e

HAB-treated Cu3(HAB)2, 30 min · Pellet

Average particle size compared before and after HAB treatment.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
average particle size before HAB treatment	29 nm	—	—	Text Rounded Reported	3 · Results and Discussion
average particle size after HAB treatment	31 nm	—	—	Text Rounded Reported	3 · Results and Discussion

HAB-treated Co3(HAB)2 · Pellet

Particle size before and after post-treatment for Co3(HAB)2.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Co3(HAB)2 particle size before treatment	56 nm	—	approximately	Text Approximate	5 · Results and Discussion · Figure S13 cited
Co3(HAB)2 particle size after treatment	54 nm	—	approximately	Text Approximate	5 · Results and Discussion · Figure S13 cited

TATHB-treated Cu3(TATHB)2 · Pellet

Particle size before and after post-treatment for Cu3(TATHB)2.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu3(TATHB)2 particle size before treatment	66 nm	—	approximately	Text Approximate	5 · Results and Discussion · Figure S12 cited
Cu3(TATHB)2 particle size after treatment	68 nm	—	approximately	Text Approximate	5 · Results and Discussion · Figure S12 cited