cMOF Evidence Base
Porosity — Enhancing Electrical Conductivity of Semiconducting MOFs via Defect Healing

Measurement evidence

Porosity

Enhancing Electrical Conductivity of Semiconducting MOFs via Defect Healing · Choi J.Y., Park J. · ACS Applied Electronic Materials · 2021 · 4197-4202

2 measurement groups · 5 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

N2 adsorption-desorption; BET surface area; DFT pore width distribution

Gas sorption and porosityDensity functional theory

pristine Cu3(HAB)2 · Pellet

Micromeritics ASAP 2020 PLUS porosimeter.

Atmosphere
N2
Context
pristine control
Measurement source
2 · Experimental Section · Figure 5
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
BET surface areaMarked as a best value within this paper187.3 m2 g^-1——Text
Exact Reported		4 · Results and Discussion · Figure 5
larger defect-associated pore width~13 Angstrom——Text
Approximate		4 · Results and Discussion · Figure 5 inset
main pore width before HAB treatmentaround 8 Angstrom—aroundText
Approximate		4 · Results and Discussion · Figure 5 inset

N2 adsorption-desorption; BET surface area; DFT pore width distribution

Gas sorption and porosityDensity functional theory

HAB-treated Cu3(HAB)2, 30 min · Pellet

Micromeritics ASAP 2020 PLUS porosimeter.

Atmosphere
N2
Context
HAB-treated target sample
Measurement source
4 · Results and Discussion · Figure 5
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
BET surface area143.4 m2 g^-1——Text
Exact Reported		4 · Results and Discussion · Figure 5
main pore width after HAB treatment7.5 Angstrom——Text
Exact Reported		4 · Results and Discussion · Figure 5 inset