DFT band structure of one-electron-oxidised Cu3(HITT)2
DFT model of oxidised Cu3(HITT)2 · Model
Oxidised Cu3(HITT)2 modelled by removing one electron from pristine Cu3(HITT)2.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| oxidised conduction band dispersion width | 2.23 meV | — | — | Text Rounded Reported | 20505 · Results and discussion · Figure S35 |
| oxidised in-plane band gapMarked as a best value within this paper | 1.0 eV | — | — | Text Rounded Reported | 20505 · Results and discussion · Figure S35 |
| oxidised valence band dispersion width | 1.43 meV | — | — | Text Rounded Reported | 20505 · Results and discussion · Figure S35 |