| Co-CAT-1 powderresearch_0053__mat__mat_co_cat_1 | Powder · Pristine Control · Pristine Framework | Powder synthesised following ref. (5) and confirmed by PXRD; used for FTIR comparison.Not specified · Not applicable | S23 · Figure caption · Figure S18 |
| Solution-solid-grown Co-CAT-1 single crystalresearch_0053__mat__mat_co_cat_1 | Single Crystal · Target Sample · Pristine Framework | Grown under conditions identical to Ni-CAT-1 except cobalt acetate replaced nickel acetate.Si/SiO2 substrate · Not specified | S22 · Figure caption · Figure S17 |
| Evaporated HHTP thin film on siliconresearch_0053__mat__mat_hhtp_precursor | Thin Film · Model System · Model | HHTP deposited by vacuum thermal evaporation; sometimes patterned with line/stripe shadow mask.Silicon or Si/SiO2 substrate · 30 nm for ellipsometry sample; 34 nm in Fig. S1 caption; 40 nm typical growth precursor | S2 and S6 · Materials and Methods; Figure S1 caption · Figure S1 |
| Ni-CAT-1 grown from drop-cast HHTP control filmresearch_0053__mat__mat_ni_cat_1 | Thin Film · Pristine Control · Pristine Framework | Growth repeated with randomly oriented drop-cast HHTP rather than evaporated aligned HHTP.Substrate bearing drop-cast HHTP film · HHTP drop-casting: 10 uL of 1.7 mM methanol solution, twice; MOF plate thickness not reported | S9 · Figure caption · Figure S4 |
| Ni-CAT-1 single-crystal electron-beam-lithography deviceresearch_0053__mat__mat_ni_cat_1 | Electrode · Pristine Control · Pristine Framework | PMMA 950k C7 spun, baked, e-beam exposed/developed, Ti/Au evaporated; SI reports the process can damage/fracture crystals.Si/SiO2 crystal substrate with Ti/Au electrodes after PMMA/e-beam processing · Single crystal plate; electrode thickness 300-400 nm Ti/Au stack reported | S3 · Materials and Methods - Device fabrication with electron beam lithography · Figure S11; Figure S15 |
| Ni-CAT-1 microsphere-gap growth controlsresearch_0053__mat__mat_ni_cat_1 | Unknown · Pristine Control · Pristine Framework | Reaction space increased with microspheres; morphology varied from wires/cylinders to low-yield plates.Si/SiO2 substrates with dispersed microspheres controlling gap · Gap controls 49 um, 9 um, and 4 um microspheres | S11 · Figure caption · Figure S6 |
| Ni-CAT-1 out-of-plane two-probe deviceresearch_0053__mat__mat_ni_cat_1 | Electrode · Target Sample · Pristine Framework | Device made and characterised for out-of-plane conductivity.Not fully specified; two-probe device for c-axis conductivity · Not specified | p005 · Author Contributions · Figure S12 |
| Ni-CAT-1 powderresearch_0053__mat__mat_ni_cat_1 | Powder · Pristine Control · Pristine Framework | Powder synthesized by reported hydrothermal method for PXRD/FTIR/band-gap comparison; recipe details not reproduced in this paper.KBr dilution for diffuse reflectance; quartz substrate for transmission; silicon substrate for FTIR single-crystal comparison where applicable · Powder diluted at 1% in KBr for diffuse reflectance | S14 and S18 · Figure captions · Figures S9 and S13 |
| Ni-CAT-1 pressed-pellet deviceresearch_0053__mat__mat_ni_cat_1 | Pellet · Pristine Control · Pristine Framework | Ni-CAT-1 powders pressed at 6.6 ton-force/cm2 and wired as pressed-pellet devices.Glass substrate with grease; connected to gold wires with carbon paste · Pellet thickness measured by micrometer; numeric thickness not specified | S4 · Materials and Methods - The pressed-pellet device fabrication |
| Solution-solid-grown Ni-CAT-1 single-crystal plates on Si/SiO2research_0053__mat__mat_ni_cat_1 | Single Crystal · Target Sample · Pristine Framework | Biphasic solution-solid growth from evaporated HHTP film and nickel acetate film, heated in water, then washed with water and DMF.Si/SiO2 substrate; crystals mostly remain on the HHTP substrate after growth · Typical precursor HHTP film 40 nm; crystal diagonal 10-100 times bigger than thickness; AFM examples ca. hundreds of nm thick | p002 · Results and Discussion · Figures 1-2 |
| Ni-CAT-1 single-crystal basal-plane stencil-mask deviceresearch_0053__mat__mat_ni_cat_1 | Electrode · Target Sample · Pristine Framework | Four electrical contacts deposited using stencil mask; palladium gave better electrical connection; stencil devices measured under vacuum in SI Fig. S11.Si/SiO2 crystal substrate with stencil-mask-deposited metal contacts · Single crystal plate; thickness not specified for transport device | p004 · Results and Discussion · Figure 4; Figure S11 |
| Ni-CAT-1 rods from water-DMF(30%) cosolvent controlresearch_0053__mat__mat_ni_cat_1 | Unknown · Pristine Control · Pristine Framework | Solution-solid growth attempted with water-DMF(30%) cosolvent, dissolving HHTP and producing solution-phase rod-shaped crystals.Si/SiO2 growth substrate · Not specified | S10 · Figure caption · Figure S5 |