Electrical Transport — Large Single Crystals of Two-Dimensional π-Conjugated Metal-Organic Frameworks via Biphasic Solution-Solid Growth

6 measurement groups · 21 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Ni-CAT-1 single-crystal electron-beam-lithography device · Electrode

Conductivity plotted versus crystal size for both fabrication methods; stencil-mask devices under vacuum, e-beam devices in ambient environment.

Temperature: room temperature
Atmosphere: Vacuum for stencil-mask samples; ambient for electron-beam samples
Geometry: Single-crystal devices made by electron-beam lithography or stencil mask
Context: pristine Ni-CAT-1 single-crystal devices
Measurement source: S16 · Figure caption · Figure S11

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Conductivity spread across devices	varies by two orders of magnitude	—	—	Caption Approximate	S16 · Figure caption · Figure S11D
Number of device samples in conductivity survey	21 samples	—	—	Caption Exact Reported	S16 · Figure caption · Figure S11D
Conductivity increase under vacuum	increases by one order of magnitude under vacuum	—	—	Caption Approximate	S16 · Figure caption · Figure S11D
Device fabrication yield	about 50%	—	—	Caption Approximate	S16 · Figure caption · Figure S11

Ni-CAT-1 single-crystal basal-plane stencil-mask device · Electrode

Rxy obtained from Ixx-Vxy slope at each magnetic field; magnetic field swept forward and reverse; data averaged over 20 magnetic-field sweeps.

Temperature: room temperature
Atmosphere: Not specified
Geometry: Single-crystal Hall-bar-like four-contact basal-plane device
Context: pristine Ni-CAT-1 single crystal
Measurement source: S4 · Materials and Methods - Electrical measurement · Figure 4E-G; Figure S14

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Electron density from Hall coefficient	(-1.4 +/- 0.42) x 10^19 cm-3	—	+/- 0.42 x 10^19 cm^-3	Text Exact Reported	p005 · Results and Discussion
Carrier type inferred from Hall sign	n-type / electron	—	—	Text Qualitative	p005 · Results and Discussion · Figure 4G
Hall coefficientMarked as a best value within this paper	(-0.46 +/- 0.14) cm3/C	—	+/- 0.14 cm3/C	Text Exact Reported	p005 · Results and Discussion · Figure 4G
Hall mobility	0.16 +/- 0.049 cm2/V sec	—	+/- 0.049 cm^2/V/s	Text Exact Reported	p005 · Results and Discussion · Table S1
Electron density as fraction of HHTP-site density	1% of the HHTP-site density	—	—	Text Rounded Reported	p005 · Results and Discussion
Number of Hall magnetic-field sweep measurements	20 magnetic-field sweep measurements (10 forward and 10 reverse)	—	—	Text Exact Reported	S4 · Materials and Methods - Electrical measurement

Ni-CAT-1 single-crystal basal-plane stencil-mask device · Electrode

Fig. S15 reports three crystal conductivities, cool-down/warm-up behaviour, and I-V curves at 300-100 K; cooling/heating rate 4 K/min.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cool-down/warm-up temperature ramp rate	4 K/min	—	—	Caption Exact Reported	S20 · Figure caption · Figure S15
Supplementary I-V temperature range	100-300 K	—	—	Figure Axis Range	S20 · Figure · Figure S15C-D

Ni-CAT-1 out-of-plane two-probe device · Electrode

Out-of-plane two-probe device image and I-V curve reported in SI.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Out-of-plane c-axis conductivity	1x10^-4 S/cm	—	—	Caption Exact Reported	S17 · Figure caption · Figure S12

Ni-CAT-1 pressed-pellet device · Pellet

Polycrystalline pressed pellet compared with single-crystal device; pellet prepared from powder pressed at 6.6 ton-force/cm2.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Arrhenius activation energy, pressed pellet	0.14 eV	—	—	Text Exact Reported	p005 · Results and Discussion · Figure 4A
Pressed-pellet conductivity	3.6 x 10^-3 S/cm	—	—	Text Exact Reported	p004 · Results and Discussion · Figure 4A
Pressed pellet conductivity deficit versus single crystals	lower by more than 2 orders of magnitude	—	—	Text Approximate	p005 · Results and Discussion

Ni-CAT-1 single-crystal basal-plane stencil-mask device · Electrode

Conductivity measured with Agilent 4156C or Keithley 2400 plus Agilent 34401A; temperature dependence in LN2 cryo-probe station or He cryostat.

Temperature: 300 K and temperature-dependent series
Atmosphere: Vacuum for stencil-mask devices in SI Fig. S11; Figure 4 conditions not fully restated
Geometry: Basal-plane single-crystal device, four electrical contacts; stencil-mask fabricated contacts
Context: pristine Ni-CAT-1 single crystal
Measurement source: p004 · Results and Discussion · Figure 4A; Figure S11

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Arrhenius activation energy, single crystal	0.09 eV	—	—	Text Exact Reported	p005 · Results and Discussion · Figure 4A
Average basal-plane single-crystal conductivity	average of 0.8 S/cm	—	standard deviation 0.7 S/cm	Text Rounded Reported	p004 · Results and Discussion · Figure 4A
Standard deviation of single-crystal conductivity	standard deviation of 0.7 S/cm	—	—	Text Rounded Reported	p004 · Results and Discussion · Figure 4A
Peak basal-plane single-crystal conductivityMarked as a best value within this paper	up to 2 S/cm	—	—	Text Rounded Reported	p004 · Results and Discussion · Figure 4A
Representative Hall-table conductivity	0.4 S/cm	—	—	SI Table Exact Reported	S26 · Table S1 · Table S1