Microscopy Morphology — Large Single Crystals of Two-Dimensional π-Conjugated Metal-Organic Frameworks via Biphasic Solution-Solid Growth

5 measurement groups · 23 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Evaporated HHTP thin film on silicon · Thin Film

Typical growth condition except absence of nickel acetate; patterned HHTP stripe film observed after 1 h and 12 h.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
HHTP film after 12 h without nickel acetate	mostly dissolved in water	—	—	Caption Qualitative	S7 · Figure caption · Figure S2
HHTP film after 1 h without nickel acetate	remained solid	—	—	Caption Qualitative	S7 · Figure caption · Figure S2

Ni-CAT-1 grown from drop-cast HHTP control film · Thin Film

Drop-cast HHTP, water-DMF cosolvent, and microsphere-gap controls imaged to test growth mechanism.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Drop-cast HHTP control yield and grain quality	low yield; hexagonal plates composed of small grains	—	—	Caption Qualitative	S9 · Figure caption · Figure S4
49-um microsphere gap morphology	very long crystals; aspect ratio >500; no plates	—	—	Caption Approximate	S11 · Figure caption · Figure S6A
4-um microsphere gap morphology	some plates; yield, size, and quality low	—	—	Caption Qualitative	S11 · Figure caption · Figure S6C
Local gap from substrate flatness	up to 1.5 um	—	—	Text Approximate	S4 · Supplementary Text - Estimation of the gap between the two substrates
Equivalent substrate gap from volume estimate	equivalent to 6-um gap	—	—	Text Approximate	S4 · Supplementary Text - Estimation of the gap between the two substrates
Estimated reaction-space volume	less than 1 uL	—	—	Text Approximate	S4 · Supplementary Text - Estimation of the gap between the two substrates · Figure S16
Diced substrate average peak-to-valley flatness	730 nm with standard error of 130 nm	—	standard error 130 nm	Text Exact Reported	S4 · Supplementary Text - Estimation of the gap between the two substrates · Figure S16
Water-DMF cosolvent morphology	rod-shape crystals; no crystal plates	—	—	Caption Qualitative	S10 · Figure caption · Figure S5

Solution-solid-grown Ni-CAT-1 single-crystal plates on Si/SiO2 · Single Crystal

Reaction time varied under typical growth conditions to assess crystal growth and defect correction.

Temperature: 95 C growth condition
Atmosphere: Water in vial
Geometry: Not applicable
Context: pristine Ni-CAT-1 crystals
Measurement source: S4 and S8 · Supplementary Text; Figure caption · Figure S3

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Crystal growth at 12 h	quality significantly improved	—	—	Text Qualitative	S4 · Supplementary Text - Crystal growth with different growth time · Figure S3D
Crystal growth at 1 h	plates continuously grow or start to merge	—	—	Text Qualitative	S4 · Supplementary Text - Crystal growth with different growth time · Figure S3B
Crystal growth at 30 min	a few micrometer size plates are formed	—	—	Text Qualitative	S4 · Supplementary Text - Crystal growth with different growth time · Figure S3A
Crystal growth at 3 h	bigger but edges and corners still dull	—	—	Text Qualitative	S4 · Supplementary Text - Crystal growth with different growth time · Figure S3C

Solution-solid-grown Ni-CAT-1 single-crystal plates on Si/SiO2 · Single Crystal

Morphology followed with growth time and quantified by crystal-size yield bins under typical growth conditions.

Temperature: growth at 95 C; imaging at room temperature
Atmosphere: Not applicable
Geometry: Not applicable
Context: pristine Ni-CAT-1 single-crystal plates
Measurement source: p002 · Results and Discussion · Figure 2; Figure S8; Table S2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Example crystal thickness from Figure 2E profile	ca. 550-600 nm	—	visual estimate ca. +/- 75 nm	Figure Axis Approximate	p002 · Figure · Figure 2E
Lateral dimension increase versus needle-shaped crystals	more than 2 orders of magnitude larger	—	—	Text Approximate	p003 · Results and Discussion · Figure 2
Large single-crystal lateral dimension	exceeding 10 um	—	—	Text Rounded Reported	p001 · Abstract
Plate diagonal to thickness ratio	10 to 100 times bigger than their thickness	—	—	Text Range	S2 · Materials and Methods - Details of growth methods
Crystal count yield, 4-6 um bin	Average # 20; standard deviation 7.8	—	standard deviation 7.8	SI Table Exact Reported	S27 · Table S2 · Table S2
Crystal count yield, 6-8 um bin	Average # 4.0; standard deviation 1.9	—	standard deviation 1.9	SI Table Exact Reported	S27 · Table S2 · Table S2
Crystal count yield, 8-10 um bin	Average # 1.4; standard deviation 1.3	—	standard deviation 1.3	SI Table Exact Reported	S27 · Table S2 · Table S2
Crystal count yield, >10 um bin	Average # 0.6; standard deviation 0.9	—	standard deviation 0.9	SI Table Exact Reported	S27 · Table S2 · Table S2

Solution-solid-grown Ni-CAT-1 single-crystal plates on Si/SiO2 · Single Crystal

No-polarized, plane-polarized and cross-polarized images collected with Nikon Eclipse LV150NA.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Polarised microscopy support for single crystallinity	supports the single crystallinity	—	—	Caption Qualitative	S24 · Figure caption · Figure S19