DFT band-structure calculations using Quantum Espresso with PBE and HSE hybrid functional
DFT model structures of 1ADCu oligomers, nanowires and sheet · Model
Experimental lattice constants and atom positions; 4 x 8 x 4 k-grid for PBE and 1 x 4 x 1 k-grid for HSE.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| 1ADCu first conduction-band width near EF | 0.18 eV | — | — | SI Table Exact Reported | SI p.5 · Table S3 · Table S3 |
| 1ADCu electron effective mass | about 1.1 m0 from Fig. 5c bar | — | — | Visual Estimate Approximate | main p.5, article p.353 · Electronic properties · Fig. 5c |
| 1ADCu hole effective mass | about 0.9 m0 from Fig. 5c bar | — | — | Visual Estimate Approximate | main p.5, article p.353 · Electronic properties · Fig. 5c |
| 1ADCu HSE computed bandgap | 2.79 eV | — | — | Text Exact Reported | main p.4, article p.352 · Electronic properties · Fig. 5a |
| 1ADCu first valence-band width near EFMarked as a best value within this paper | 0.62 eV | — | — | SI Table Exact Reported | SI p.5 · Table S3 · Table S3 |
| 4DICu first conduction-band width near EF | 0.42 eV | — | — | SI Table Exact Reported | SI p.5 · Table S3 · Table S3 |
| 4DICu electron effective mass | about 0.85 m0 from Fig. 5c bar | — | — | Visual Estimate Approximate | main p.5, article p.353 · Electronic properties · Fig. 5c |
| 4DICu hole effective mass | close to 3 m0 | — | — | Text Approximate | main p.4, article p.352 · Electronic properties · Fig. 5c |
| 4DICu HSE computed bandgap | 3.62 eV | — | — | Text Exact Reported | main p.4, article p.352 · Electronic properties · Fig. 5b |
| 4DICu first valence-band width near EF | 0.16 eV | — | — | SI Table Exact Reported | SI p.5 · Table S3 · Table S3 |