Electrical Transport — In-Plane Oriented Two-Dimensional Conjugated Metal-Organic Framework Films for High-Performance Humidity Sensing

2 measurement groups · 6 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

free-standing in-plane oriented HIB-Cu film · Thin Film

Room temperature under nitrogen; voltage swept from -0.5 V to 0.5 V in 400 steps.

Temperature: room temperature
Atmosphere: nitrogen
Geometry: HIB-Cu films on n-doped Si/300 nm SiO2; 70 nm Au contacts; channel length 100 um; width 4.5 mm
Context: pristine HIB-Cu film
Measurement source: 20 · Supporting Figure S15 · Figure S15

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
HIB-Cu film conductivity, 120 nm filmMarked as a best value within this paper	sigma_120nm = 0.103 S/m	0.00103 S/cm	—	Figure Axis Rounded Reported	20 · Supporting Figure S15 · Figure S15
HIB-Cu film conductivity, 54 nm filmMarked as a best value within this paper	sigma_54nm = 0.117 S/m	0.00117 S/cm	—	Figure Axis Rounded Reported	20 · Supporting Figure S15 · Figure S15
HIB-Cu intrinsic electrical conductivity approximate	~0.1 S/m	0.001 S/cm	—	Text Approximate	1150 · Results · Figure S15

free-standing in-plane oriented HIB-Cu film · Thin Film

Lakeshore Hall System 9700A; magnetic field swept from -4 T to 4 T at 300 K.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
HIB-Cu Hall carrier densityMarked as a best value within this paper	n = 4.82E13 cm-3	48200000000000000000 m-3	—	Figure Axis Rounded Reported	25 · Supporting Figure S18 · Figure S18
HIB-Cu Hall mobilityMarked as a best value within this paper	mu = 3.2 +/- 0.4 cm2 V-1 s-1	0.00032 m2/V/s	+/- 0.4 cm2/V/s	Figure Axis Rounded Reported	25 · Supporting Figure S18 · Figure S18
HIB-Cu majority-carrier type	p-type semiconducting behaviour	—	—	Caption Qualitative	25 · Supporting Figure S18 · Figure S18