Campbell M.G., Liu S.F., Swager T.M. et al. · Journal of the American Chemical Society · 2015 · 13780-13783
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
The active chemiresistors are pristine conductive 2D MOFs rather than CNT composites or guest-loaded frameworks.
Caveat: Framework synthesis recipes are cited to earlier papers and not reproduced in this paper.
main p001-p002 / article pages 13780-13781 · Abstract and Results · Figure 1 · Linked to 3 structured results
A three-MOF chemiresistor array can discriminate five VOC functional-group classes with 92% jack-knifed LDA accuracy.
Caveat: Classification uses the reported 64-trial jack-knifed matrix; raw sensing data are not provided as a spreadsheet.
main p003 / article page 13782 · Results · Table 1 · Linked to 6 structured results
Device morphology, contact resistance, and overall device resistance were tested and judged not to dominate VOC sensing response.
Caveat: The exact statistical spread for resistance-dependence is not tabulated.
SI S5 · Discussion of Sensing Mechanism · Figures S3, S4, S7 · Linked to 3 structured results
The metal centre identity, especially Ni versus Cu, has the largest impact on sensing response sign and magnitude.
Caveat: Mechanistic interpretation is preliminary; SI states detailed mechanism is premature.
SI S4 · Discussion of Sensing Mechanism · Figure 2 · Linked to 4 structured results
The sensing behaviour is consistent with charge transfer as a major mechanism, with hydrogen bonding also likely contributing for amines and ligand-dependent responses.
Caveat: Authors explicitly frame the mechanism as a preliminary discussion and state that multiple competing mechanisms operate.
main p003 / article page 13782 · Results and Summary · Figure 4 · Linked to 3 structured results
Linear I-V curves show ohmic contacts for the MOF chemiresistor devices, arguing against Schottky barrier modulation as the origin of sensing response.
Caveat: I-V fit values were read from a rendered SI figure.
SI S5 · Discussion of Sensing Mechanism · Figure S6 · Linked to 3 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| Cu3(HHTP)2 (MOF 1)Browse family: Cu₃(HHTP)₂ / Cu–HHTP | Cu3(HHTP)2Cu square-planar metal centres · HHTP (2,3,6,7,10,11-hexahydroxytriphenylene) | 2D · PristineConductive layered hexagonal 2D MOF; sheets stack in eclipsed or slipped-parallel conformations with extended 1D pores. | main p002 / article page 13781 · Results · Figure 1 |
| Cu3(HITP)2 (MOF 2)Browse family: Cu₃(HITP)₂ / Cu–HITP | Cu3(HITP)2Cu square-planar metal centres · HITP (2,3,6,7,10,11-hexaiminotriphenylene) | 2D · PristineConductive layered hexagonal 2D MOF; sheets stack in eclipsed or slipped-parallel conformations with extended 1D pores. | main p002 / article page 13781 · Results · Figure 1 |
| Conductive 2D MOF chemiresistor array using MOFs 1-3 | Array of Cu3(HHTP)2, Cu3(HITP)2, and Ni3(HITP)2 devicesCu and Ni centres across the array · HHTP and HITP across the array | 2D · UnknownCross-reactive chemiresistive sensor array constructed from three structurally analogous conductive 2D MOFs. | main p002 / article page 13781 · Results · Figure S2 |
| Ni3(HITP)2 (MOF 3)Browse family: Ni₃(HITP)₂ / Ni–HITP | Ni3(HITP)2Ni square-planar metal centres · HITP (2,3,6,7,10,11-hexaiminotriphenylene) | 2D · PristineConductive layered hexagonal 2D MOF; sheets stack in eclipsed or slipped-parallel conformations with extended 1D pores. | main p002 / article page 13781 · Results · Figure 1 |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| Cu3(HHTP)2 pressed pellet / powderresearch_0145__mat__mat_cu_hhtp | Pellet · Target Sample · Pristine Framework | Freshly prepared MOF powder pressed between two steel rods in a glass capillary for pellet conductivity; thin layer on zero-background silicon for PXRD.Pressed pellet thickness typically 0.1-0.5 mm for the conductivity method. | SI S2-S3 · Materials and Methods; Instrumentation |
| Drop-cast Cu3(HHTP)2 chemiresistor on interdigitated Au/corundumresearch_0145__mat__mat_cu_hhtp | Electrode · Target Sample · Pristine Framework | MOF suspension in acetone drop-cast and dried under nitrogen; device resistance targeted at about 10-100 kOhm.Interdigitated gold electrodes on corundum substrate (CC1.W1, BVT Technologies) | SI S2 · Materials and Methods · Figure S3 |
| Cu3(HITP)2 pressed pellet / powderresearch_0145__mat__mat_cu_hitp | Pellet · Target Sample · Pristine Framework | Freshly prepared MOF powder pressed between two steel rods in a glass capillary for pellet conductivity; thin layer on zero-background silicon for PXRD.Pressed pellet thickness typically 0.1-0.5 mm for the conductivity method. | SI S2-S3 · Materials and Methods; Instrumentation |
| Drop-cast Cu3(HITP)2 chemiresistor on interdigitated Au/corundumresearch_0145__mat__mat_cu_hitp | Electrode · Target Sample · Pristine Framework | MOF suspension in acetone drop-cast and dried under nitrogen; device resistance targeted at about 10-100 kOhm.Interdigitated gold electrodes on corundum substrate (CC1.W1, BVT Technologies) | SI S2 · Materials and Methods · Figure S3 |
| Drop-cast MOF 1-3 chemiresistor arrayresearch_0145__mat__mat_mof_array_1_3 | Electrode · Target Sample · Pristine Framework | Array of separately fabricated MOF chemiresistors exposed to VOC vapours for PCA/LDA classification.Multiple interdigitated gold-electrode chemiresistors containing pristine MOFs 1-3 | main p002 / article page 13781 · Results · Figure 2 and Figure S2 |
| Ni3(HITP)2 pressed pellet / powderresearch_0145__mat__mat_ni_hitp | Pellet · Target Sample · Pristine Framework | Freshly prepared MOF powder pressed between two steel rods in a glass capillary for pellet conductivity; thin layer on zero-background silicon for PXRD.Pressed pellet thickness typically 0.1-0.5 mm for the conductivity method. | SI S3 · Instrumentation |
| Mechanically drawn Ni3(HITP)2 chemiresistor on Au/weigh paperresearch_0145__mat__mat_ni_hitp | Electrode · Target Sample · Pristine Framework | Compressed MOF 3 pellet placed in a mechanical pencil holder and abraded by hand into the electrode gap until triplicate channels reached about 200-400 MOhm.180 nm gold electrodes on weigh paper with 0.3 mm gap | SI S2 · Materials and Methods · Figure S4 |
| Drop-cast Ni3(HITP)2 chemiresistor on interdigitated Au/corundumresearch_0145__mat__mat_ni_hitp | Electrode · Target Sample · Pristine Framework | MOF suspension in acetone drop-cast and dried under nitrogen; device resistance targeted at about 10-100 kOhm.Interdigitated gold electrodes on corundum substrate (CC1.W1, BVT Technologies) | SI S2 · Materials and Methods · Figure S3 |