Electrical Transport

current-voltage (I-V) and Schottky-diode analysis under dark and photoillumination

ITO/compound 1/Al metal-semiconductor thin-film device · Thin Film

Room temperature 26 deg C; applied bias within +/-2 V; dark and light illumination with intensity approximately 100 mW cm-2.

Temperature: 299
Atmosphere: not reported
Geometry: ITO/compound 1/metal MS junction thin-film device; main text emphasises Al/compound 1 interface, SI states ITO/compound 1/Al but also names gold as metal electrode
Context: pristine framework thin-film MS device
Measurement source: rendered pages 3-5 / article pp.19939-19941 · Optical and Electrical Characterization · Figures 5-9; Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Schottky barrier height, dark	0.61 eV	—	—	Table Exact Reported	rendered page 5 / article p.19941 · Table 1 · Table 1
Schottky barrier height, lightMarked as a best value within this paper	0.47 eV	—	—	Table Exact Reported	rendered page 5 / article p.19941 · Table 1 · Table 1
electrical conductivity, dark	2.21 x 10^-5 S cm^-1	—	—	Table Exact Reported	rendered page 5 / article p.19941 · Table 1 · Table 1
electrical conductivity, lightMarked as a best value within this paper	6.36 x 10^-5 S cm^-1	—	—	Table Exact Reported	rendered page 5 / article p.19941 · Table 1 · Table 1
compound 1 dispersion concentration for device fabrication	18 mg/ml	—	—	Text Exact Reported	rendered page 18 / SI p.S18 · Device Fabrication
effective diode area	7.065 x 10^-2 cm2	—	—	Text Exact Reported	rendered page 19 / SI p.S19 · Electrical Characterization
ideality factor eta, dark	2.93	—	—	Table Exact Reported	rendered page 5 / article p.19941 · Table 1 · Table 1
ideality factor eta, lightMarked as a best value within this paper	2.08	—	—	Table Exact Reported	rendered page 5 / article p.19941 · Table 1 · Table 1
low-voltage transport regime	Region I slope approximately 1; Ohmic rule	—	—	Text Approximate	rendered page 4 / article p.19940 · Optical and Electrical Characterization · Figure 8
higher-voltage transport regime	Region II follows I proportional to V2; trap-free SCLC	—	—	Text Approximate	rendered page 4 / article p.19940 · Optical and Electrical Characterization · Figure 8
photosensitivityMarked as a best value within this paper	4.88	—	—	Table Exact Reported	rendered page 5 / article p.19941 · Table 1 · Table 1
rectification ratio Ion/Ioff, dark	26.27	—	—	Table Exact Reported	rendered page 5 / article p.19941 · Table 1 · Table 1
rectification ratio Ion/Ioff, lightMarked as a best value within this paper	80.85	—	—	Table Exact Reported	rendered page 5 / article p.19941 · Table 1 · Table 1
series resistance from dV/dlnI, dark	801.49 ohm	—	—	Table Exact Reported	rendered page 5 / article p.19941 · Table 1 · Table 1
series resistance from dV/dlnI, lightMarked as a best value within this paper	456.70 ohm	—	—	Table Exact Reported	rendered page 5 / article p.19941 · Table 1 · Table 1
series resistance from H, dark	807.18 ohm	—	—	Table Exact Reported	rendered page 5 / article p.19941 · Table 1 · Table 1
series resistance from H, lightMarked as a best value within this paper	460.82 ohm	—	—	Table Exact Reported	rendered page 5 / article p.19941 · Table 1 · Table 1

SCLC/Mott-Gurney charge-transport parameter analysis

Space-charge-limited current analysis

ITO/compound 1/Al metal-semiconductor thin-film device · Thin Film

Parameters derived from higher-voltage I vs V2, ln(I) vs ln(V), capacitance-frequency and related analyses; SI equations/data referenced.

Temperature: 299
Atmosphere: not reported
Geometry: Al/compound 1 MS junction thin-film device
Context: pristine framework thin-film MS device
Measurement source: rendered pages 4-6 / article pp.19940-19942 · Optical and Electrical Characterization · Figures 8-9; Table 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
diffusion coefficient D, dark	1.62 x 10^-5	—	—	Table Exact Reported	rendered page 6 / article p.19942 · Table 2 · Table 2
diffusion coefficient D, lightMarked as a best value within this paper	1.05 x 10^-4	—	—	Table Exact Reported	rendered page 6 / article p.19942 · Table 2 · Table 2
relative dielectric constant epsilon_r, Table 2 dark row	3.66 x 10^-1	—	—	Table Exact Reported	rendered page 6 / article p.19942 · Table 2 · Table 2
relative dielectric constant from prose	0.486	—	—	Text Exact Reported	rendered page 5 / article p.19941 · Optical and Electrical Characterization · Figure S9
film thickness assumed for dielectric calculation	~1 um	—	~	Text Approximate	rendered page 20 / SI p.S20 · Electrical Characterization · Equation S7
diffusion length LD, dark	1.27 x 10^-7 m	—	—	Table Exact Reported	rendered page 6 / article p.19942 · Table 2 · Table 2
diffusion length LD, lightMarked as a best value within this paper	2.06 x 10^-7 m	—	—	Table Exact Reported	rendered page 6 / article p.19942 · Table 2 · Table 2
effective mobility, dark	6.26 x 10^-4 m2 V^-1 s^-1	—	—	Table Exact Reported	rendered page 6 / article p.19942 · Table 2 · Table 2
effective mobility, lightMarked as a best value within this paper	4.07 x 10^-3 m2 V^-1 s^-1	—	—	Table Exact Reported	rendered page 6 / article p.19942 · Table 2 · Table 2
mobility-transit time product, dark	3.14 x 10^-13	—	—	Table Exact Reported	rendered page 6 / article p.19942 · Table 2 · Table 2
mobility-transit time product, lightMarked as a best value within this paper	8.22 x 10^-13	—	—	Table Exact Reported	rendered page 6 / article p.19942 · Table 2 · Table 2
transit time tau, dark	5.02 x 10^-10 s	—	—	Table Exact Reported	rendered page 6 / article p.19942 · Table 2 · Table 2
transit time tau, lightMarked as a best value within this paper	20.2 x 10^-10 s	—	—	Table Exact Reported	rendered page 6 / article p.19942 · Table 2 · Table 2

2 measurement groups · 30 results