Computational Modelling — Photoinduced Charge-Carrier Generation in Epitaxial MOF Thin Films: High Efficiency as a Result of an Indirect Electronic Band Gap?

Measurement evidence

Computational Modelling

Photoinduced Charge-Carrier Generation in Epitaxial MOF Thin Films: High Efficiency as a Result of an Indirect Electronic Band Gap? · Liu J., Zhou W., Liu J. et al. · Angewandte Chemie - International Edition · 2015 · 7441-7445

1 measurement group · 9 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

DFTB, TD-DFT, force-field structure optimisation, and PBE/TZVP CRYSTAL09 band-structure calculations

Pd porphyrin Zn-SURMOF 2 computational model · Model

AuToGraFS model; UFF/UFF4MOF/GULP lattice optimisation; DFTB+ 1.2 with QUASINANO 2013.1; TD-DFT PBE0/6-311++g(2d,p); CRYSTAL09 PBE/TZVP with HAYWSC ECP for Pd.

Geometry
Periodic SURMOF model
Context
Computational model systems
Measurement source
8-9 / p009-p010 · 1.8 Computational studies
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Valence and conduction band dispersionabout 3 meV for both valence and conduction bandsText
Approximate
7444 / p004 · Main text · Figure 5
Electron effective mass9.6 meText
Exact Reported
7444 / p004 · Main text · Figure 5
Free-base Zn-SURMOF 2 band gap at Gamma1.58 eV (DFTB level)Text
Exact Reported
7443 / p003 · Main text
Hole effective mass4.5 meText
Exact Reported
7444 / p004 · Main text · Figure 5
Indirect band-gap assignmentCB minimum at Z-point; VB maximum at Gamma-pointText
Qualitative
7444 / p004 · Main text · Figure 5
Pd Zn-SURMOF 2 band gapMarked as a best value within this paper1.94 eVText
Exact Reported
7444 / p004 · Main text
Saturated single porphyrin HOMO-LUMO gap1.60 eVText
Exact Reported
7444 / p004 · Main text
Single porphyrin TD-DFT gap1.51 eVText
Exact Reported
7444 / p004 · Main text
Zn porphyrin Zn-SURMOF 2 band gap1.88 eVText
Exact Reported
7444 / p004 · Main text