Measurement evidence
Photoinduced Charge-Carrier Generation in Epitaxial MOF Thin Films: High Efficiency as a Result of an Indirect Electronic Band Gap? · Liu J., Zhou W., Liu J. et al. · Angewandte Chemie - International Edition · 2015 · 7441-7445
Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.
Free-base porphyrin Zn-SURMOF 2 on Si substrate, 30-cycle spray film · Thin Film
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Free-base Zn-SURMOF 2 thickness on Si after 30 cycles | ~300 nm | — | — | Visual Estimate Approximate | 45 / p046 · Supplementary Figures · Figure S35 |
Free-base porphyrin Zn-SURMOF 2/FTO, 300 nm · Electrode
LEO 1530 Gemini SEM at 3 to 5 kV; images for free-base and Pd films on FTO.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Film thickness for 30 deposition cycles | 300 nm | — | — | Caption Rounded Reported | 14 / p015 · Supplementary Figures · Figure S5 |