Electrical Transport — Colossal Increase in Electric Current and High Rectification Ratio in a Photoconducting, Self-Cleaning, and Luminescent Schottky Barrier NMOF Diode

6 measurement groups · 35 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Two-probe current-voltage conductivity

Electrical conductivity

H2OPE-C12 ligand control conductivity film · Thin Film

H2OPE-C12 control film measured under dark and light by same conductivity protocol

Geometry: two ohmic parallel electrodes
Context: ligand control
Measurement source: 5 · Results and Discussion · Figure S20

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
dark conductivity	7.7 x 10^-6 S/cm	—	—	Text Exact Reported	5 · Results and Discussion · Figure S20
light conductivity	8.3 x 10^-6 S/cm	—	—	Text Exact Reported	5 · Results and Discussion · Figure S20

Schottky diode I-V

Electrical conductivity

ITO/H2OPE-C12/Al ligand control diode · Electrode

ITO/H2OPE-C12/Al control device measured under dark and light

Geometry: ITO/H2OPE-C12/Al sandwich
Context: ligand control device
Measurement source: 5 · Results and Discussion · Figure S21

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
ligand-control photosensitivity	1.07	—	—	Text Exact Reported	5 · Results and Discussion · Figure S21
ligand-control rectification ratio dark	1.77	—	—	Text Exact Reported	5 · Results and Discussion · Figure S21
ligand-control rectification ratio light	1.78	—	—	Text Exact Reported	5 · Results and Discussion · Figure S21

Two-probe current-voltage conductivity

Electrical conductivity

NMOF-1 spin-coated planar conductivity film · Electrode

Keithley 2400 source meter; room temperature/open atmosphere; dark and light conditions

Temperature: room temperature
Atmosphere: open atmosphere
Geometry: two ohmic parallel electrodes, 9 mm x 1 mm with 1 mm gap
Context: pristine NMOF-1 film
Measurement source: 5 · Conductivity Measurements of NMOF-1 and H2OPE-C12 · Figure 2c; Scheme S4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
dark conductivityMarked as a best value within this paper	9.6 x 10^-6 S/cm	—	—	Text Exact Reported	4 · Results and Discussion · Figure 2c
photoirradiated conductivityMarked as a best value within this paper	1.4 x 10^-5 S/cm	—	—	Text Exact Reported	4 · Results and Discussion · Figure 2c

Thermionic-emission and Cheung-Cheung diode-parameter analysis

ITO/NMOF-1/Al Schottky barrier diode · Electrode

Ideality factor, series resistance and barrier height extracted from forward I-V using Cheung method

Geometry: ITO/NMOF-1/Al SBD
Context: pristine NMOF-1 SBD device
Measurement source: 6-7, 27-28 · Device Characterization; Table S2 · Figure S16; Table S2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Schottky barrier height dark	0.35 eV	—	—	SI Table Exact Reported	28 · Table S2 · Table S2
Schottky barrier height light	0.33 eV	—	—	SI Table Exact Reported	28 · Table S2 · Table S2
ideality factor dark	1.82	—	—	SI Table Exact Reported	28 · Table Summarizing the Schottky diode parameters · Table S2
ideality factor light	1.78	—	—	SI Table Exact Reported	28 · Table Summarizing the Schottky diode parameters · Table S2
series resistance Rs from dV/dlnI dark	270 ohm	—	—	SI Table Exact Reported	28 · Table S2 · Table S2
series resistance Rs(H) dark	330 ohm	—	—	SI Table Exact Reported	28 · Table S2 · Table S2
series resistance Rs(H) light	235 ohm	—	—	SI Table Exact Reported	28 · Table S2 · Table S2
series resistance Rs from dV/dlnI light	245 ohm	—	—	SI Table Exact Reported	28 · Table S2 · Table S2

Schottky diode I-V and transient photocurrent

Photoresponse and photoelectrochemistry Electrical conductivity

ITO/NMOF-1/Al Schottky barrier diode · Electrode

ITO/NMOF-1/Al SBD measured from -1 to +1 V under dark and AM 1.5 irradiation; transient photocurrent at 1 V bias

Geometry: ITO/NMOF-1/Al sandwich, effective diode area 7.065 x 10^-6 m2
Context: pristine NMOF-1 SBD device
Measurement source: 4 · Results and Discussion · Figure 2d-f; Table S2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
current increase at +0.2 V in dark	1000-fold	—	—	Text Exact Reported	1 · Abstract
current increase at +0.2 V under light	1400-fold	—	—	Text Exact Reported	1 · Abstract
photosensitivityMarked as a best value within this paper	1.43	—	—	Text Exact Reported	4 · Results and Discussion · Figure 2f; Table S2
rectification ratio at +/-1 V darkMarked as a best value within this paper	47	—	—	Text Exact Reported	4 · Results and Discussion · Figure 2e; Table S2
rectification ratio at +/-1 V lightMarked as a best value within this paper	83	—	—	Text Exact Reported	4 · Results and Discussion · Figure 2e; Table S2
transient photocurrent low state at 1 V	about 0.007 A	—	—	Figure Axis Approximate	5 · Results and Discussion · Figure 2f
transient photocurrent high state at 1 V	about 0.010 A	—	—	Figure Axis Approximate	5 · Results and Discussion · Figure 2f

SCLC/Mott-Gurney charge-transport analysis

Space-charge-limited current analysis

ITO/NMOF-1/Al Schottky barrier diode · Electrode

I-V curves divided into Ohmic, trap-free SCLC and higher-power regions; epsilon_r=11.7 and film thickness about ~1 um used

Geometry: ITO/NMOF-1/Al SBD
Context: pristine NMOF-1 SBD device
Measurement source: 7-8, 30 · Device Characterization; Tabulation of charge transport data · Figures S17-S19; Table S3

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
carrier concentration dark	87 x 10^21 m^-3	—	—	SI Table Exact Reported	30 · Tabulation of charge transport data · Table S3
carrier concentration light	90 x 10^21 m^-3	—	—	SI Table Exact Reported	30 · Tabulation of charge transport data · Table S3
diffusion length dark	198 nm	—	—	SI Table Exact Reported	30 · Tabulation of charge transport data · Table S3
diffusion length lightMarked as a best value within this paper	206 nm	—	—	SI Table Exact Reported	30 · Tabulation of charge transport data · Table S3
effective carrier mobility dark	6.9 x 10^-6 m2 V^-1 s^-1	0.069 cm^2 V^-1 s^-1	—	SI Table Exact Reported	30 · Tabulation of charge transport data · Table S3
effective carrier mobility lightMarked as a best value within this paper	10.1 x 10^-6 m2 V^-1 s^-1	0.10099999999999999 cm^2 V^-1 s^-1	—	SI Table Exact Reported	30 · Tabulation of charge transport data · Table S3
mobility-lifetime product dark	75 x 10^-12 cm2 V^-1	—	—	SI Table Exact Reported	30 · Tabulation of charge transport data · Table S3
mobility-lifetime product light	81 x 10^-12 cm2 V^-1	—	—	SI Table Exact Reported	30 · Tabulation of charge transport data · Table S3
Ohmic-region slope	nearly 1	—	—	Text Approximate	4 · Results and Discussion · Figures S16-S19
SCLC-region slope	about 2	—	—	Text Approximate	4 · Results and Discussion · Figures S16-S19
high-bias-region slope	m approx 3	—	—	Text Approximate	4 · Results and Discussion · Figures S16-S19
transit time dark	0.11 us	—	—	SI Table Exact Reported	30 · Tabulation of charge transport data · Table S3
transit time light	0.08 us	—	—	SI Table Exact Reported	30 · Tabulation of charge transport data · Table S3