Microscopy Morphology — Colossal Increase in Electric Current and High Rectification Ratio in a Photoconducting, Self-Cleaning, and Luminescent Schottky Barrier NMOF Diode

Measurement evidence

Microscopy Morphology

Colossal Increase in Electric Current and High Rectification Ratio in a Photoconducting, Self-Cleaning, and Luminescent Schottky Barrier NMOF Diode · Roy S., Das M., Bandyopadhyay A. et al. · Journal of Physical Chemistry C · 2017 · 23803-23810

1 measurement group · 10 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

FESEM, TEM, HRTEM, electron diffraction and AFM

NMOF-1 bulk nanosheets/powder · Nanosheet

FESEM on silicon wafer; TEM after ethanol sonication/drop-casting on carbon-coated Cu grid; AFM height profiles

Measurement source
2 · Results and Discussion · Figures 1c-f, S7-S9
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
AFM nanosheet height upper bound40-70 nmText
Range
2 · Results and Discussion · Figure S9
AFM nanosheet height lower bound40-70 nmText
Range
2 · Results and Discussion · Figure S9
nanosheet length upper bound300-600 nmText
Range
2 · Results and Discussion · Figures 1c and S7
nanosheet length lower bound300-600 nmText
Range
2 · Results and Discussion · Figures 1c and S7
nanosheet width upper bound300-500 nmText
Range
2 · Results and Discussion · Figures 1c and S7
nanosheet width lower bound300-500 nmText
Range
2 · Results and Discussion · Figures 1c and S7
HRTEM ordered-line spacing upper bound1-1.5 nmText
Range
2 · Results and Discussion · Figure 1f
HRTEM ordered-line spacing lower bound1-1.5 nmText
Range
2 · Results and Discussion · Figure 1f
estimated pi-stacked chain count upper bound90-160 pi-stacked OPE-C12 1D chainsText
Range
2 · Results and Discussion · Figure S9
estimated pi-stacked chain count lower bound90-160 pi-stacked OPE-C12 1D chainsText
Range
2 · Results and Discussion · Figure S9