Electrical Transport — Nanosheets of Two-Dimensional Magnetic and Conducting Fe(II)/Fe(III) Mixed-Valence Metal-Organic Frameworks

4 measurement groups · 16 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

compound 1 black hexagonal prismatic single crystals · Single Crystal

Current along hexagonal faces, parallel to ab plane; four single crystals; 2-300 K; Ohmic voltage range.

Temperature: 2-300
Geometry: sigma_par, current parallel to ab plane
Context: pristine single-crystal MOF
Measurement source: S-7-S-8 · Electrical characterization · Table S2; Figure S9

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
conductivity anisotropy sigma_par/sigma_perp	300	—	—	SI Table Rounded Reported	S-8 · Table S2 · Table S2
activation energy parallel high-temperature regime	57(4) meV (300-100 K)	—	4 meV	SI Table Exact Reported	S-8 · Table S2 · Table S2
activation energy parallel low-temperature regime	115(5) meV (100-50 K)	—	5 meV	SI Table Exact Reported	S-8 · Table S2 · Table S2
transport behaviour	semiconductor; Arrhenius behaviour with two semiconducting regimes	—	—	Text Qualitative	p005 · Electrical Conductivity · Figure 7
room-temperature conductivity parallel to layersMarked as a best value within this paper	3.1(8)x10-2 S/cm	—	0.008 S/cm	SI Table Exact Reported	S-8 · Table S2 · Table S2

compound 1 black hexagonal prismatic single crystals · Single Crystal

Current perpendicular to hexagonal faces, along c direction; four single crystals; 2-300 K; Ohmic voltage range.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
activation energy perpendicular high-temperature regime	21(3) meV (300-80 K)	—	3 meV	SI Table Exact Reported	S-8 · Table S2 · Table S2
activation energy perpendicular low-temperature regime	115(5) meV (80-50 K)	—	5 meV	SI Table Exact Reported	S-8 · Table S2 · Table S2
room-temperature conductivity perpendicular to layers	1.0(9)x10-4 S/cm	—	0.00009 S/cm	SI Table Exact Reported	S-8 · Table S2 · Table S2

compound 2 black single crystals · Single Crystal

Current along hexagonal faces, parallel to ab plane; four single crystals; 2-300 K; Ohmic voltage range.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
conductivity anisotropy sigma_par/sigma_perp	500	—	—	SI Table Rounded Reported	S-8 · Table S2 · Table S2
activation energy parallel high-temperature regime	60(6) meV (300-150 K)	—	6 meV	SI Table Exact Reported	S-8 · Table S2 · Table S2
activation energy parallel low-temperature regime	100(5) meV (150-60 K)	—	5 meV	SI Table Exact Reported	S-8 · Table S2 · Table S2
transport behaviour	semiconductor; Arrhenius behaviour with two semiconducting regimes	—	—	Text Qualitative	p005 · Electrical Conductivity · Figure 7
room-temperature conductivity parallel to layersMarked as a best value within this paper	3(1)x10-3 S/cm	—	0.001 S/cm	SI Table Exact Reported	S-8 · Table S2 · Table S2

compound 2 black single crystals · Single Crystal

Current perpendicular to hexagonal faces, along c direction; four single crystals; 2-300 K; Ohmic voltage range.

Temperature: 2-300
Geometry: sigma_perp, current perpendicular to ab plane
Context: pristine single-crystal MOF
Measurement source: S-7-S-8 · Electrical characterization · Figure S9; Table S2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
activation energy perpendicular high-temperature regime	14(4) meV (300-150 K)	—	4 meV	SI Table Exact Reported	S-8 · Table S2 · Table S2
activation energy perpendicular low-temperature regime	116(5) meV (150-60 K)	—	5 meV	SI Table Exact Reported	S-8 · Table S2 · Table S2
room-temperature conductivity perpendicular to layers	6(2)x10-6 S/cm	—	0.000002 S/cm	SI Table Exact Reported	S-8 · Table S2 · Table S2