Scheiger C., Pohls J.F., Mostaghimi M. et al. · Materials Horizons · 2025 · 6189-6194
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
The optimised Cu3(HHTP)2 SURMOF is reported as the first MOF thin film exhibiting metallic electrical transport.
Caveat: The claim is the authors' novelty statement; database confidence refers to extraction fidelity, not independent novelty verification.
p005 / 6193 · Conclusion · Linked to 4 structured results
UPS data do not support a ca. 100 meV band gap, which conflicts with an intrinsic semiconductor interpretation from long-channel activated transport.
Caveat: UPS figure values are read from labelled plot annotations; the absence of a gap is a qualitative interpretation.
p003 / 6191 · Results · Fig. S8 · Linked to 3 structured results
DFT assigns the metallic behaviour to a symmetry-related Dirac cone in the D6h Cu3(HHTP)2 sheets, with remnants persisting in the ABAB-stacked bulk.
Caveat: Computational mechanism; experimental support comes from conductivity trend and UPS rather than direct band imaging.
p004 / 6192 · Results · Fig. 3 · Linked to 3 structured results
Visible-region UV-vis absorption, especially 575-625 nm, is used as a surrogate for improved coordination, reduced defects, and higher conductivity in the ML optimisation.
Caveat: The UV-vis/conductivity relationship is proposed and supported by calculations and trends, not by a tabulated quantitative correlation coefficient.
p003 / 6191 · Results · Fig. 1 and Fig. S2 · Linked to 4 structured results
The lower and activated long-channel conductivity is attributed to electron transport across domain boundaries, while 100 nm contacts probe intrinsic intra-domain metallic behaviour.
Caveat: Domain-size value is approximate and inferred from FWHM analysis reported in text.
p004 / 6192 · Results · Fig. 2 and Fig. 4 · Linked to 4 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| Co3(HHTP)2 modelBrowse family: Co₃(HHTP)₂ / Co–HHTP | Co3(HHTP)2Co nodes in 2D HHTP framework · HHTP | 2D · Model SystemFully relaxed 2D high-spin computational model used for band-structure comparison. | p008 / SI page 8 · Band Structure Calculations · Figure 9 |
| Cu3(HHTP)2Browse family: Cu₃(HHTP)₂ / Cu–HHTP | Cu3(HHTP)2 / Cu3HHTP2Cu2+ secondary building units · 2,3,6,7,10,11-hexahydroxytriphenylene (HHTP) | 2D · PristineConductive MOF composed of conjugated two-dimensional honeycomb monolayers; AB stacking in bilayer and ABAB stacking in bulk; channels along [001]. | p002 / 6190 · Introduction · Fig. 1 |
| Ni3(HHTP)2 modelBrowse family: Ni₃(HHTP)₂ / Ni–HHTP | Ni3(HHTP)2Ni nodes in 2D HHTP framework · HHTP | 2D · Model SystemFully relaxed 2D high-spin computational model used for band-structure comparison. | p008 / SI page 8 · Band Structure Calculations · Figure 8 |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| Co3(HHTP)2 2D computational modelresearch_0417__mat__mat_co_hhtp2_model | Model · Model System · Model | DFT high-spin model2D model | p008 / SI page 8 · Band Structure Calculations · Figure 9 |
| Cu3(HHTP)2 bulk computational modelresearch_0417__mat__mat_cu_hhtp2 | Model · Model System · Model | DFT high-spin bulk model3D ABAB stacked model | p007 / SI page 7 · Band Structure Calculations · Figure 6 |
| Cu3(HHTP)2 monolayer computational modelresearch_0417__mat__mat_cu_hhtp2 | Model · Model System · Model | DFT high-spin monolayer model with D6h symmetrysingle plane / monolayer | p004 / 6192 · Results · Fig. 3 |
| Cu3(HHTP)2 SURMOF with 100 nm lithographic 4-terminal contactsresearch_0417__mat__mat_cu_hhtp2 | Thin Film · Target Sample · Pristine Framework | Optimised SURMOF processed by PMMA electron-beam lithography, Cr/Au contact evaporation and lift-offSiO2/Si · 650 nm for short-channel electron-beam lithography sample | p005 / SI Experimental 2.3 · Conductivity measurement · Fig. 4, Fig. S6, Fig. S7 |
| Cu3(HHTP)2 SURMOF with 100 um shadow-mask Au contact spacingresearch_0417__mat__mat_cu_hhtp2 | Thin Film · Target Sample · Pristine Framework | Optimised SURMOF contacted with 45 nm Au pads evaporated through a shadow maskSiO2/Si · 620 nm for long-channel shadow mask sample | p005 / SI Experimental 2.3 · Conductivity measurement · Fig. S4 and Fig. S5 |
| Cu3(HHTP)2 SURMOF with 15 um contact spacingresearch_0417__mat__mat_cu_hhtp2 | Thin Film · Target Sample · Pristine Framework | Optimised SURMOF measured with reduced electrode spacingSiO2/Si · not separately reported; long-channel family | p010 / SI Fig. S5 · Figure captions · Figure S5 |
| Non-optimised Cu3(HHTP)2 SURMOFresearch_0417__mat__mat_cu_hhtp2 | Thin Film · Pristine Control · Pristine Framework | Initial, non-optimised deposition conditionnot specified | p008 / SI Fig. S2 · Figure captions · Figure S2 |
| Optimised Cu3(HHTP)2 SURMOF thin filmresearch_0417__mat__mat_cu_hhtp2 | Thin Film · Target Sample · Pristine Framework | ML-optimised robotic layer-by-layer SURMOF grown in nitrogen gloveboxSiO2/Si substrate unless otherwise specified · around 600 nm; SEM 602 +/- 74 nm; AFM glass sample 648 +/- 67 nm | p003 / 6191 · Results · Table S1 and Fig. S1 referenced |
| Ni3(HHTP)2 2D computational modelresearch_0417__mat__mat_ni_hhtp2_model | Model · Model System · Model | DFT high-spin model2D model | p008 / SI page 8 · Band Structure Calculations · Figure 8 |