Electrical Transport — Dirac-cone induced metallic conductivity in Cu3(HHTP)2: high-quality MOF thin films fabricated via ML-driven robotic synthesis

5 measurement groups · 12 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Cu3(HHTP)2 SURMOF with 100 nm lithographic 4-terminal contacts · Thin Film

Linear I(V) at 100 K and 300 K

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Ohmic contact behaviour	linear I(V), metallic contact between gold pads and MOF film	—	—	Caption Qualitative	p011 / SI Fig. S6 · Figure captions · Figure S6

Cu3(HHTP)2 SURMOF with 100 nm lithographic 4-terminal contacts · Thin Film

100 nm contact separation, 40 um channel width, 1.5 nm Cr / 40 nm Au contacts, Keithley 2450; applied currents +/-10 uA

Temperature: 100-300
Atmosphere: Lakeshore CRX-VF probe station, p < 2 x 10^-7 mbar
Geometry: 100 nm four-terminal electrodes on ca. 650 nm film
Context: pristine framework thin film
Measurement source: p004-p005 / 6192-6193 · Results · Fig. 4c; Fig. S6; Fig. S7

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Metallic temperature coefficient	conductivity increases by about 15% on cooling from 300 K to 100 K	—	—	Text Rounded Reported	p005 / 6193 · Results · Fig. 4c
Short-channel conductivity at 100 K, substrate 1	295.8 +/- 5.9 S m-1 at 100 K	—	+/- 5.9 S m-1	Text Exact Reported	p005 / 6193 · Results · Fig. 4c
Short-channel conductivity at 100 K, independent substrateMarked as a best value within this paper	300.6 +/- 5.9 S m-1 at 100 K	—	+/- 5.9 S m-1	Text Exact Reported	p005 / 6193 · Results · Fig. 4c
Short-channel conductivity at 300 K	240 S m-1 at 300 K / room temperature	—	—	Text Rounded Reported	p005 / 6193 · Results · Fig. 4c
Short-channel conductivity listed in SI comparison table	Film (4-probe), 100 K, 300 S m-1, this work	—	—	SI Table Rounded Reported	p006 / SI Table S2 · Material characterization · Table S2
Short-channel conductivity-sample thickness	650 nm	—	—	Text Exact Reported	p005 / SI Experimental 2.3 · Conductivity measurement

Cu3(HHTP)2 SURMOF with 100 um shadow-mask Au contact spacing · Thin Film

100 x 100 um2 Au pads, 100 um contact separation, room temperature, vacuum thermal evaporation contact preparation

Temperature: room temperature
Atmosphere: vacuum probe-station conditions for transport; contact evaporation in high vacuum
Geometry: Long-channel top contacts; 45 nm Au; 100 um spacing
Context: pristine framework thin film
Measurement source: p003 / 6191 · Results · Fig. S4 referenced

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Average room-temperature conductivity, 100 um contacts	107.8 +/- 3.9 S m-1	—	+/- 3.9 S m-1	Text Exact Reported	p003 / 6191 · Results
Maximum room-temperature conductivity, 100 um contacts	up to 110 S m-1 at room temperature	—	—	Text Rounded Reported	p003 / 6191 · Results
Long-channel conductivity-sample thickness	620 nm	—	—	Text Exact Reported	p005 / SI Experimental 2.3 · Conductivity measurement

Cu3(HHTP)2 SURMOF with 100 um shadow-mask Au contact spacing · Thin Film

100 um contact spacing, measured from 100 K to 300 K; activated decrease on cooling

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Long-channel activated-transport activation energy	82 meV	0.082 eV	—	Text Exact Reported	p003 / 6191 · Results · Fig. S5

Cu3(HHTP)2 SURMOF with 15 um contact spacing · Thin Film

Reduced electrode spacing control compared with 100 um device

Atmosphere: vacuum probe-station conditions inferred from SI conductivity measurement method
Geometry: 15 um electrode spacing
Context: pristine framework thin film
Measurement source: p010 / SI Fig. S5 · Figure captions · Figure S5

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Conductivity at 15 um contact spacing	113.5 S/m	—	—	Caption Exact Reported	p010 / SI Fig. S5 · Figure captions · Figure S5