Partial recipeSource: Both
Route 1: Other
p001-p004 / SI Experimental 1.1-1.4 · Fabrication of SURMOFs · Table S1
Metal precursorsCopper(II) acetate monohydrate, best-fitness metal concentration 1.66 mmol L-1
Linker precursors2,3,6,7,10,11-hexahydroxytriphenylene (HHTP), best-fitness linker concentration 0.30 mmol L-1
SolventsPure ethanol for metal salt; water/ethanol mixture for organic linker and rinsing solution; 210 mL solution volumes
AdditivesWater as growth modulator, best-fitness amount 19.23 mL
AtmosphereNitrogen-filled glove box
Temperatureroom temperature deposition; substrate pre-activation at 1000 C for 1 h
Time40 LBL cycles; per cycle metal solution 10 min, rinse 5 min, ultrasonic rinse 31 s, linker solution 15 min, rinse 5 min, ultrasonic rinse 31 s; defect healing 48.71 h
Substrate orientationSiO2/Si from thermally activated silicon wafer, 2 cm x 3 cm
Work-upRinsing after metal and linker steps, with additional ultrasonic rinsing twice in each LBL cycle
ActivationSilicon wafer thermal activation at 1000 C for 1 h followed by oxygen plasma for 30 min immediately before use
Scalability contextIndustrial six-axis dipping robot; 210 mL containers; three substrates mounted per run; ML optimisation via SyCoFinder over 20 parameter sets.
Show 5 structured reagent records
| Role | Reagent | Amount / concentration | Source |
|---|---|---|---|
| Metal Source | Copper (II) acetate monohydrate | 1.66 mmol L-1 for best-fitness run | p001-p004 / SI Experimental 1.1-1.4 · Fabrication of SURMOFs · Table S1 |
| Linker | 2,3,6,7,10,11-Hexahydroxytriphenylene (HHTP) | 0.30 mmol L-1 for best-fitness run | p001-p004 / SI Experimental 1.1-1.4 · Fabrication of SURMOFs · Table S1 |
| Solvent | Ethanol (AR grade, >=99.8%) | solution volumes set at 210 mL | p001-p004 / SI Experimental 1.1-1.4 · Fabrication of SURMOFs · Table S1 |
| Additive | Water as growth modulator | 19.23 mL for best-fitness run | p001-p004 / SI Experimental 1.1-1.4 · Fabrication of SURMOFs · Table S1 |
| Other | Silicon wafer / SiO2/Si substrate | 2 cm x 3 cm substrates · wafer resistivity 1-5 ohm cm-1 | p001-p004 / SI Experimental 1.1-1.4 · Fabrication of SURMOFs · Table S1 |