Keum C., Park S., Kim H. et al. · Chemical Engineering Journal · 2023 · 141079
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
The two-cMOF sensor array discriminated DA, NE and EP under ascorbic-acid interference and in artificial cerebrospinal fluid using PCA of voltage-shift responses.
Caveat: Demonstration uses artificial CSF and selected interferents; the paper notes mixture discrimination remains an obstacle.
main p.8 · 3.5 Discrimination of catecholamines in biofluids · Fig. 5g,h · Linked to 8 structured results
The Cu3HHTP2 sensing layer maintained dopamine voltage-shift response across 0.01x, 0.1x and 1x PBS, supporting operation under high ionic strength and mitigation of Debye-screening limitations.
Caveat: The conclusion is based on dopamine measurements and may not generalise to all analytes or media.
main p.6 · 3.3 c-MOF thin films as active sensing layer · Fig. 4e · Linked to 1 structured result
The HTP/TCP c-MOF DGFET array achieved nanomolar LODs for dopamine, norepinephrine and epinephrine in 1x PBS.
Caveat: LOD values are printed inside SI figure panels rather than in a table; values were read from rendered SI Fig. S22.
SI rendered p.23 · Supplementary Figures and Tables · Fig. S22 · Linked to 6 structured results
Adding Cu3HHTP2 or Cu2TCPP films to the extended gate did not substantially degrade DGFET on/off ratio or subthreshold swing compared with the bare electrode, and the c-MOF-coated devices reduced PBS drift.
Caveat: Drift magnitude is not numerically reported in the text and is treated qualitatively.
main p.5 · 3.2 Electrical characteristics · Fig. 3; Fig. S9-S11 · Linked to 7 structured results
The authors identify discrimination in mixtures as a remaining obstacle despite successful tests with selected interferents and artificial CSF.
Caveat: Author-stated limitation in conclusion.
main p.8 · 4. Conclusion · Linked to 1 structured result
Cu2TCPP thin films formed ordered layered conductive MOF films on SnO2/ITO, with GIXRD peaks matching reported Cu2TCPP facets and UV-vis evidence of porphyrin framework formation.
Caveat: Porphyrin centre is described as free-base, not fully metalated by Cu2+.
main p.5 · 3.1 Characterization · Fig. 2e,f · Linked to 5 structured results
Cu3HHTP2 thin films formed ordered layered conductive MOF films on SnO2/ITO, with GIXRD peaks consistent with face-on slipped-parallel AB stacking.
Caveat: Structure assignment follows comparison to previous literature; no CIF supplied for these thin films.
main p.5 · 3.1 Characterization · Fig. 2e,f · Linked to 5 structured results
Cu3HHTP2 and Cu2TCPP differ in pore size, producing size-dependent response reductions in Cu2TCPP and enabling discrimination among catecholamines with similar functional groups.
Caveat: Pore-size mechanism is inferred from response trends and literature; direct uptake amounts for each analyte are not reported.
main p.7 · 3.4 Discrimination of neurotransmitters · Fig. 5c,d · Linked to 6 structured results
Dopamine adsorbed in redox-active c-MOF films induces charge accumulation at the extended-gate surface, shifting DGFET threshold voltage and enabling small-molecule sensing in PBS.
Caveat: Mechanism is inferred from device response, redox-active MOF chemistry, bare-electrode control, and Co-node control rather than direct operando spectroscopy.
main p.6 · 3.3 c-MOF thin films as active sensing layer · Fig. 4 · Linked to 6 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| Bare SnO2/ITO extended-gate electrode | SnO2/ITO on glass with PDMS wellsSnO2/ITO inorganic electrode; no MOF metal nodes. | unknown · UnknownNon-MOF extended-gate device control fabricated from SnO2/ITO-coated glass and PDMS channels. | main p.2 · 2.4 Fabrication of disposable four-channel extended-gate |
| Co3HHTP2 control MOFBrowse family: Co₃(HHTP)₂ / Co–HHTP | Co3HHTP2Cobalt nodes; SI XPS caption states presence of Co2+, C and O. · HHTP ligand. | 2D · PristineStructurally similar HHTP-based control film; SI caption reports characteristic XRD peaks and UV-vis absorptions near 360 and 630 nm associated with aromatic pi-pi* and ligand-to-metal charge-transfer transitions. | SI text · Supplementary Figures and Tables · Fig. S19 |
| Cu2TCPP conductive MOF | Cu2TCPP; TCPP = tetrakis(4-carboxyphenyl)porphyrinCopper nodes; Cu 2p XPS deconvoluted to Cu2+ and Cu+ components at 934.8 and 932.9 eV. Porphyrin centre described as free-base, not metalated by Cu2+. · 5,10,15,20-tetra(4-carboxyphenyl)porphyrin / TCPP. | 2D · PristineLayered 2D conductive MOF; GIXRD peaks assigned to the (110), (320), (400), and (330) facets with highly ordered layer-stacking orientation. | main p.4-5 · 3.1 Characterization of c-MOF thin film electrodes · Fig. 2 |
| Cu3HHTP2 conductive MOFBrowse family: Cu₃(HHTP)₂ / Cu–HHTP | Cu3HHTP2; HHTP = 2,3,6,7,11,12-hexahydroxytriphenyleneCopper nodes; Cu 2p XPS deconvoluted to Cu2+ and Cu+ components at 934.8 and 932.9 eV. · 2,3,6,7,10,11-hexahydroxytriphenylene / HHTP ligand (main text defines HHTP as 2,3,6,7,11,12-hexahydroxytriphenylene in one place). | 2D · PristineLayered 2D conductive MOF; GIXRD peaks assigned to (100), (200), and (210) ab-plane reflections, implying face-on orientation stacked perpendicular to the substrate in slipped-parallel AB mode. | main p.4-5 · 3.1 Characterization of c-MOF thin film electrodes · Fig. 2 |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| Bare SnO2/ITO extended-gate electroderesearch_0457__mat__bare_sno2_ito_eg | Electrode · Pristine Control · Unknown | Extended gate without c-MOF coating.Glass substrate with SnO2 (70 nm)/ITO (300 nm) and four-channel PDMS well · SnO2 70 nm; ITO 300 nm | main p.2 · 2.4 Fabrication |
| HTP-Co sensor: Co3HHTP2 thin film-modified electroderesearch_0457__mat__co3hhtp2 | Electrode · Pristine Control · Pristine Framework | Prepared similarly to Cu3HHTP2 by replacing Cu(OAc)2 with Co(OAc)2.SnO2/ITO extended gate · AFM height 16.7 +/- 1.0 nm in Fig. S18. | SI rendered p.19 · Supplementary Figures and Tables · Fig. S18 |
| TCP sensor: Cu2TCPP thin film on SnO2/ITO extended gate, 10 growth cyclesresearch_0457__mat__cu2tcpp | Electrode · Target Sample · Pristine Framework | Layer-by-layer Cu2TCPP thin film; washed with ethanol and dried in an oven for 1 day.Glass substrate with SnO2 (70 nm)/ITO (300 nm), PDMS four-channel well, APTES-treated surface · 10 growth cycles; AFM height 48.5 +/- 10.7 nm in Fig. S3; cross-section SEM inset shown in Fig. 2d. | SI rendered p.4 · Supplementary Figures and Tables · Fig. S3b |
| Cu2TCPP thin film on SnO2/ITO for GIXRD, 20 growth cyclesresearch_0457__mat__cu2tcpp | Thin Film · Target Sample · Pristine Framework | Layer-by-layer Cu2TCPP film used for in-plane GIXRD.SnO2/ITO substrate · 20 growth cycles | main p.4 · Fig. 2 caption · Fig. 2e |
| HTP sensor: Cu3HHTP2 thin film on SnO2/ITO extended gate, 10 growth cyclesresearch_0457__mat__cu3hhtp2 | Electrode · Target Sample · Pristine Framework | Layer-by-layer Cu3HHTP2 thin film; washed with ethanol and dried in an oven for 1 day.Glass substrate with SnO2 (70 nm)/ITO (300 nm), PDMS four-channel well, APTES-treated surface · 10 growth cycles; AFM height 18.2 +/- 3.3 nm in Fig. S3; cross-section SEM inset shown in Fig. 2c. | SI rendered p.4 · Supplementary Figures and Tables · Fig. S3a |
| Cu3HHTP2 thin film on SnO2/ITO for GIXRD, 20 growth cyclesresearch_0457__mat__cu3hhtp2 | Thin Film · Target Sample · Pristine Framework | Layer-by-layer Cu3HHTP2 film used for in-plane GIXRD.SnO2/ITO substrate · 20 growth cycles | main p.4 · Fig. 2 caption · Fig. 2e |
| Cu3HHTP2 thickness series on extended gate, 5/10/15/20 growth cyclesresearch_0457__mat__cu3hhtp2 | Electrode · Target Sample · Pristine Framework | Layer-by-layer Cu3HHTP2 films with varied growth cycles.SnO2/ITO extended gate · Cu3HHTP2-5C 5.4 +/- 2.0 nm; 10C 18.2 +/- 3.3 nm; 15C 53.7 +/- 9.8 nm; 20C 85.9 +/- 16.9 nm from AFM height-profile labels. | SI rendered p.16; p.4 · Supplementary Figures and Tables · Figs. S15 and S3 |