Electrical Transport — Modular conductive MOF-gated field-effect biosensor for sensitive discrimination on the small molecular scale

6 measurement groups · 14 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Bare SnO2/ITO extended-gate electrode · Electrode

Measured over 30 min in 1x PBS.

Atmosphere: 1x PBS
Geometry: Bare extended-gate DGFET
Context: bare control drift
Measurement source: main p.5 · 3.2 Electrical characteristics · Fig. 3d; Fig. S11

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Bare electrode drift in PBS	voltage drift observed	—	—	Qualitative Qualitative	main p.5 · 3.2 Electrical characteristics · Fig. 3d; Fig. S11

HTP sensor: Cu3HHTP2 thin film on SnO2/ITO extended gate, 10 growth cycles · Electrode

Measured over 30 min in 1x PBS.

Atmosphere: 1x PBS
Geometry: Extended-gate DGFET
Context: HTP drift stability
Measurement source: main p.5 · 3.2 Electrical characteristics · Fig. 3d; Fig. S11

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
HTP/TCP drift stability in PBS	reliable electrical signals without voltage drift	—	—	Qualitative Qualitative	main p.5 · 3.2 Electrical characteristics · Fig. 3d; Fig. S11

TCP sensor: Cu2TCPP thin film on SnO2/ITO extended gate, 10 growth cycles · Electrode

Measured over 30 min in 1x PBS.

Atmosphere: 1x PBS
Geometry: Extended-gate DGFET
Context: TCP drift stability
Measurement source: main p.5 · 3.2 Electrical characteristics · Fig. 3d; Fig. S11

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source

Bare SnO2/ITO extended-gate electrode · Electrode

Bare electrode control; values reported from Fig. S9.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Bare electrode current on/off ratio	10^6	—	—	Text Rounded Reported	main p.5 · 3.2 Electrical characteristics · Fig. S9
Bare electrode subthreshold swing	2.82 +/- 0.03 V/dec	—	+/- 0.03 V/dec	Text Exact Reported	main p.5 · 3.2 Electrical characteristics · Fig. S9
Bare electrode threshold voltage	~ -0.1 V	—	~0.1 V visual	Figure Axis Approximate	SI rendered p.9 · Supplementary Figures and Tables · Fig. S8b

HTP sensor: Cu3HHTP2 thin film on SnO2/ITO extended gate, 10 growth cycles · Electrode

1x PBS; dual-gate operation; bottom-gate sweep -16 to 2 V; drain voltage 3 V.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Drain voltage during ID-VG	3 V	—	—	Text Exact Reported	main p.2 · 2.6 Measurement setup
HTP current on/off ratio	~10^6	—	—	Text Approximate	main p.5 · 3.2 Electrical characteristics · Fig. 3a
HTP subthreshold swing	2.67 +/- 0.03 V/dec	—	+/- 0.03 V/dec	Text Exact Reported	main p.5 · 3.2 Electrical characteristics · Fig. 3a
HTP threshold voltage	~ -0.8 V	—	~0.1 V visual	Figure Axis Approximate	SI rendered p.9 · Supplementary Figures and Tables · Fig. S8b
Bottom-gate sweep end voltage	-16 to 2 V	—	—	Text Exact Reported	main p.2 · 2.6 Measurement setup
Bottom-gate sweep start voltage	-16 to 2 V	—	—	Text Exact Reported	main p.2 · 2.6 Measurement setup

TCP sensor: Cu2TCPP thin film on SnO2/ITO extended gate, 10 growth cycles · Electrode

1x PBS; dual-gate operation; bottom-gate sweep -16 to 2 V; drain voltage 3 V.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
TCP current on/off ratio	~10^6	—	—	Text Approximate	main p.5 · 3.2 Electrical characteristics · Fig. 3b
TCP subthreshold swingMarked as a best value within this paper	2.45 +/- 0.05 V/dec	—	+/- 0.05 V/dec	Text Exact Reported	main p.5 · 3.2 Electrical characteristics · Fig. 3b
TCP threshold voltage	~ -1.2 V	—	~0.1 V visual	Figure Axis Approximate	SI rendered p.9 · Supplementary Figures and Tables · Fig. S8b