Diffraction Structure — Experimental manifestation of redox-conductivity in metal-organic frameworks and its implication for semiconductor/insulator switching

Measurement evidence

Diffraction Structure

Experimental manifestation of redox-conductivity in metal-organic frameworks and its implication for semiconductor/insulator switching · Li J., Kumar A., Johnson B.A. et al. · Nature Communications · 2023 · 4388

1 measurement group · 4 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Thin-film X-ray diffraction and structural modelling

X-ray diffraction and scattering

Zn(pyrazol-NDI) thin film on FTO · Thin Film

Experimental thin-film XRD on FTO compared with simulated powder XRD; structure reconstructed based on reported structure.

Geometry: FTO-supported thin film
Context: Pristine Zn(pyrazol-NDI) thin film.
Measurement source: 3 · MOF thin-film preparation and basic characterizations · Fig. 2a,b; Supplementary Fig. 4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Effective NDI-NDI distance along a axis	8.03 A	—	—	Text Exact Reported	3 · MOF thin-film preparation and basic characterizations · Fig. 2a; Supplementary Fig. 4
Effective NDI-NDI distance along b axis	9.58 A	—	—	Text Exact Reported	3 · MOF thin-film preparation and basic characterizations · Fig. 2a; Supplementary Fig. 4
Effective NDI-NDI distance along c axisMarked as a best value within this paper	3.86 A	—	—	Text Exact Reported	3 · MOF thin-film preparation and basic characterizations · Fig. 2a; Supplementary Fig. 4
Preferred thin-film XRD orientation	distinct (110) and (220) peaks; c-axis parallel to FTO surface	—	—	Text Qualitative	3 · MOF thin-film preparation and basic characterizations · Fig. 2b