Roy S., Halder S., Drew M.G.B. et al. · ACS Omega · 2018 · 12788-12796
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
The pristine CP thin-film device is photosensitive, with higher conductivity and rectification ratio under AM 1.5G illumination than in the dark.
Caveat: Reported conductivity values are internally inconsistent between Table 4 and Table 5/text; both are retained.
4-6 · Electrical Characterization · Table 4; Table 5 · Linked to 5 structured results
The 3.18 eV direct band gap indicates semiconducting behaviour suitable for an active electronic device.
Caveat: Band gap was obtained from a Tauc plot; raw absorption data were not tabulated.
3-4 · Optical Analysis · Figure 4 · Linked to 2 structured results
PXRD of both the thin film and bulk material agrees with the simulated single-crystal pattern, supporting sample consistency/purity.
Caveat: PXRD agreement is qualitative in the SI; no quantitative Rietveld or peak table is provided.
S7-S9 · PXRD · Figures S6-S7 · Linked to 2 structured results
The paper links coordinate-bond chain formation and intermolecular interactions to high conductivity in the heterobimetallic CP.
Caveat: The structure-property link is asserted rather than mechanistically isolated by controls.
7 · Conclusions · Linked to 3 structured results
Nonlinear dark and illuminated I-V curves indicate that the fabricated metal-semiconductor junction behaves as a Schottky junction.
Caveat: Based on device-level I-V behaviour and thermionic-emission analysis.
4-5 · Electrical Characterization · Figure 5 · Linked to 4 structured results
The authors interpret the charge transport as ohmic at low bias, trap filling at intermediate bias, and trap-free SCLC at higher bias.
Caveat: Region slopes are discussed qualitatively and shown in plots; individual slopes were not tabulated.
5-6 · Electrical Characterization · Figure 8 · Linked to 3 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| [(NCS)Pb(H2O)LNi(NCS)]n | C21H22N4NiO5PbS2; repeating unit [(NCS)Pb(H2O)LNi(NCS)]nNi(II) and Pb(II) centres in hetero-dinuclear neutral units · deprotonated N,N'-bis(3-methoxysalicylidene)propane-1,3-diamine Schiff base ligand L2- plus terminal/bridging thiocyanate | 1D · PristineMonoclinic P21/n coordination polymer chain; repeating hetero-dinuclear neutral units joined through two mu1,3-thiocyanate bridges; pi-pi interactions form a 2D supramolecular structure. | 1-3 · Abstract; Structure Description · Scheme 1; Table 1; Figure 1 |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| X-ray quality crystalline [(NCS)Pb(H2O)LNi(NCS)]nresearch_0499__mat__ni_pb_cp | Single Crystal · Pristine Control · Mixed Metal | Crystals obtained by slow evaporation in open atmosphere and isolated for single-crystal X-ray diffraction and crystal I-V measurement. | 2 · Experimental Section - Synthesis |
| Powdered/bulk [(NCS)Pb(H2O)LNi(NCS)]nresearch_0499__mat__ni_pb_cp | Powder · Pristine Control · Mixed Metal | Bulk/powdered complex used for PXRD, FESEM, IR, UV-vis/fluorescence in DMF, and TGA. | 2-4 · Physical Measurements; Morphological Analysis · Figure 3 |
| Pelletised [(NCS)Pb(H2O)LNi(NCS)]n for dielectric measurementresearch_0499__mat__ni_pb_cp | Pellet · Pristine Control · Mixed Metal | Synthesised complex pelletised into a disc for capacitance/frequency measurement.1.8 mm; diameter 7.32 mm | S5 · Dielectric Measurements · Figure S4 |
| ITO/[(NCS)Pb(H2O)LNi(NCS)]n/Al thin-film Schottky deviceresearch_0499__mat__ni_pb_cp | Thin Film · Target Sample · Mixed Metal | DMF dispersion spin-coated on cleaned ITO glass at 600 rpm for 4 min and 1000 rpm for 6 min; vacuum annealed at 80 deg C for 30 min; Al thermally evaporated through a shadow mask.ITO-coated glass substrate with Al top electrode · about 1 um | 2 · Experimental Section - Device Fabrication · Figure S2 |