Sensing Application — Fabrication of an Active Electronic Device Using a Hetero-bimetallic Coordination Polymer

Measurement evidence

Sensing Application

Fabrication of an Active Electronic Device Using a Hetero-bimetallic Coordination Polymer · Roy S., Halder S., Drew M.G.B. et al. · ACS Omega · 2018 · 12788-12796

1 measurement group · 5 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Photosensitivity, responsivity, and detectivity estimation from dark/light I-V response

Electrical conductivity

ITO/[(NCS)Pb(H2O)LNi(NCS)]n/Al thin-film Schottky device · Thin Film

Photodetector metrics derived for the Schottky device under AM 1.5G illumination versus dark.

Temperature: room temperature
Atmosphere: ambient
Geometry: ITO/CP thin film/Al Schottky diode, effective area 7.065 x 10^-2 cm^2
Context: pristine CP active thin film
Measurement source: 4-5 · Electrical Characterization · Table 4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
specific detectivityMarked as a best value within this paper	6.55 x 10^10 Jones	—	—	Text Exact Reported	4-5 · Electrical Characterization
photosensitivityMarked as a best value within this paper	5.76	—	—	Text Exact Reported	4-5 · Electrical Characterization · Table 4
responsivityMarked as a best value within this paper	1.69 A W^-1	—	—	Text Exact Reported	4 · Electrical Characterization
Table 4 this-work conductivity under dark	6.02 x 10^-6 S cm^-1	—	—	Table Exact Reported	5 · Electrical Characterization · Table 4
Table 4 this-work conductivity under light	3.47 x 10^-5 S cm^-1	—	—	Table Exact Reported	5 · Electrical Characterization · Table 4